200MHz Rail-to-Rail Amplifiers

文件：1.05752 Mbytes Page：15 Pages

200MHz Rail-to-Rail Amplifiers

文件：395.04 Kbytes Page：15 Pages

200MHz Rail-to-Rail Amplifiers

文件：830.12 Kbytes Page：16 Pages

200MHz Rail-to-Rail Amplifiers

125千赫兹只读非接触门禁卡芯片

EL8200C2是一款无源被动式低成本的125千赫兹只读射频标签芯片，其内部有64位激光熔丝可供生产厂家在生产工艺阶段根据用户提供的ID码进行烧录编程。含有EL8200C2芯片的标签与读卡器设备按照门禁卡行业内广泛采纳的标准ID-64编码规则进行通讯，将ID码发送至读卡器。为满足客户不同的成本和性能区分你的需要，EL8200C2含有三种不同的谐振电容版本，即580pF、620pF、和660pF，分别对应于2.8mH、2.6mH、和2.46mH 三种不同的外置谐振电感值。EL8200C2 芯片在设计上特别考虑并优化了智能卡厂生产线大规模生产智能卡时特别关心的成品良率问题。

200MHz Rail-to-Rail Amplifiers

文件：726.69 Kbytes Page：15 Pages

200MHz Rail-to-Rail Amplifiers

文件：395.04 Kbytes Page：15 Pages

200MHz Rail-to-Rail Amplifiers

文件：395.04 Kbytes Page：15 Pages

200MHz Rail-to-Rail Amplifiers

文件：726.69 Kbytes Page：15 Pages

200MHz Rail-to-Rail Amplifiers

200MHz Rail-to-Rail Amplifiers

文件：395.04 Kbytes Page：15 Pages

200MHz Rail-to-Rail Amplifiers

文件：726.69 Kbytes Page：15 Pages

200MHz Rail-to-Rail Amplifiers

文件：395.04 Kbytes Page：15 Pages

200MHz Rail-to-Rail Amplifiers

文件：726.69 Kbytes Page：15 Pages

200MHz Rail-to-Rail Amplifiers

文件：726.69 Kbytes Page：15 Pages

200MHz Rail-to-Rail Amplifiers

文件：395.04 Kbytes Page：15 Pages

丝印代码：BAMAA；200MHz Rail-to-Rail Amplifiers

文件：830.12 Kbytes Page：16 Pages

丝印代码：BAMAA；200MHz Rail-to-Rail Amplifiers

文件：830.12 Kbytes Page：16 Pages

200MHz Rail-to-Rail Amplifiers

文件：726.69 Kbytes Page：15 Pages

200MHz Rail-to-Rail Amplifiers

文件：395.04 Kbytes Page：15 Pages

200MHz Rail-to-Rail Amplifiers

文件：395.04 Kbytes Page：15 Pages

200MHz Rail-to-Rail Amplifiers

文件：726.69 Kbytes Page：15 Pages

丝印代码：BAMAA；200MHz Rail-to-Rail Amplifiers

文件：830.12 Kbytes Page：16 Pages

Ultra fast high-voltage soft-recovery controlled avalanche rectifiers

DESCRIPTION Plastic package, using glass passivation and a high temperature alloyed construction. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. The package should be used in an insulating medium such as resin, oil or SF6 gas.

Silicon planar type

Silicon planar type For stabilization of power supply ■Features •Extremely low noise voltage caused from the diode (2.4V to 39V, 1/3 to 1/10 of our conventional MAZ3000 series) •Extremely good rising performance (in the low-current range) •Easy-to-select the optimum diode because

Silicon planar type

Silicon planar type For stabilization of power supply ■Features •Extremely low noise voltage caused from the diode (2.4V to 39V, 1/3 to 1/10 of our conventional MAZ3000 series) •Extremely good rising performance (in the low-current range) •Easy-to-select the optimum diode because

Silicon planar type

Silicon planar type For stabilization of power supply ■Features •Extremely low noise voltage caused from the diode (2.4V to 39V, 1/3 to 1/10 of our conventional MAZ3000 series) •Extremely good rising performance (in the low-current range) •Easy-to-select the optimum diode because

RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Power Transistor The TPV8200B is designed for output stages in band IV and V TV transmitter amplifiers. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness. Including input and output matchin