Continuous Hinge Door with Quarter Turn

Application -Designed to enclose electrical and/or electronic equipment and protect against harsh,industrial environments. -For use as instrument enclosures, electric, hydraulic or pneumatic control housings,electrical junction boxes or terminal wiring enclosures. -Impressive styling features m

包装：散装 描述：BOX STEEL GRAY 4\ 盒子，外壳，机架 箱

包装：散装 描述：BOX STEEL GRAY 4\ 盒子，外壳，机架 箱

金属机壳

Data subject to change without notice

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Continuous Hinge Door with Quarter Turn

Application -Designed to enclose electrical and/or electronic equipment and protect against harsh,industrial environments. -For use as instrument enclosures, electric, hydraulic or pneumatic control housings,electrical junction boxes or terminal wiring enclosures. -Impressive styling features m

Continuous Hinge Door with Quarter Turn

Application -Designed for use as instrument enclosures, electric, hydraulic or pneumatic controlhousings, electrical junction boxes or terminal wiring enclosures. -Provides protection where equipment may be hosed down or otherwise be very wet, or inspecific applications where corrosion may be a

Continuous Hinge Door with Quarter Turn

Application -Designed for use as instrument enclosures, electric, hydraulic or pneumatic controlhousings, electrical junction boxes or terminal wiring enclosures. -Provides protection where equipment may be hosed down or otherwise be very wet, or inspecific applications where corrosion may be a

Boite de jonction en acier inoxydable de type 4X

文件：160.46 Kbytes Page：3 Pages

DATA SUBJECT TO CHANGE WITHOUT NOTLCE

文件：146.15 Kbytes Page：1 Pages

DATA SUBJECT TO CHANGE WITHOUT NOTLCE

文件：146.72 Kbytes Page：1 Pages

Boite de jonction en acier inoxydable de type 4X

文件：160.46 Kbytes Page：3 Pages

N-Channel Power MOSFETs, 8A, 450 V/500V

Description These devices are n-channel, enhancement mode, power MOSFETs designed sepecially for high voltage, high speed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers.

N-CHANNEL POWER MOSFETS

FEATURES • Low Boston) at high voltage • Improved Inductive ruggedness • Excellent high voltage stability • Fast switching times • Rugged polyslllcon gate cell structure • Low Input capacitance • Extended safe operating area • Improved high temperature reliability • TO-3 package (High vol

0.39 INCH (9.9MM) SINGLE DIGIT STICK DISPLAY

N-Channel JFET Monolithic Dual

DESCRIPTION The U443 Series is an N-Channel Monolithic Dual JFET designed for high speed amplifier circuits. Featuring high gain ( > 6 mS typical), low leakage ( FEATURES • High Gain . . . . . . . . . . . . . . . . . . . . . . . gfs > 6 mS typical • Low Leakage . . . . . . . . . . . . . . . .

0.39 INCH (9.9MM) SINGLE DIGIT STICK DISPLAY

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