Proximity Sensors Inductive Stainless Steel Housing Types EI, AC, M12, M18, M30

文件：73.79 Kbytes Page：3 Pages

封装/外壳：圆柱形，有螺纹 - M30 包装：散装 描述：SENSOR PROX INDUCTIVE 15MM CYL 传感器，变送器 接近传感器 - 工业

封装/外壳：圆柱形，有螺纹 - M30 包装：散装 描述：SENSOR PROX INDUCTIVE 15MM CYL 传感器，变送器 接近传感器 - 工业

接近传感器/接近开关

Proximity Sensors Inductive Stainless Steel Housing Types EI, AC, M12, M18, M30

文件：73.79 Kbytes Page：3 Pages

Switching Application

Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=2.2KΩ, R2=10KΩ)

N - CHANNEL 30V - 0.013 ohm - 40A - D2PAK/TO-220 STripFETO POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique Single Feature Size strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a rema

N - CHANNEL 30V - 0.013 ohm - 40A - D2PAK/TO-220 STripFETO POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique Single Feature Size strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a rema

N - CHANNEL 30V - 0.013 ohm - 40A - D2PAK/TO-220 STripFETO POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique Single Feature Size strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a rema

SANKEN ELECTRIC COMPANY, LTD.

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