高压600V半桥MOS驱动芯片

EG2106D 是一款高性价比的 MOS 管、IGBT 管栅极驱动专用芯片，内部集成了逻辑信号输入处理电路、欠压保护电路、电平位移电路、脉冲滤波电路及输出驱动电路，专用于无刷电机控制器、电源 DC - DC 中的驱动电路。高端工作电压可达 600V，低端 Vcc 的电源电压范围宽 10V - 25V。该芯片输入通道 HIN 内建了一个 200K 下拉电阻，LIN 内建了一个 200K 下拉电阻，在输入悬空时使上、下功率 MOS 管处于关闭状态，输出电流能力为 IO+/-0.3/0.6A，采用 SOP8 封装。 • 高端悬浮自举电源设计，耐压可达 600V\n• 适应 5V、3.3V 输入电压\n• 最高频率支持 500KHZ\n• VCC 和 VB 端电源带欠压保护\n• 低端 VCC 电压范围 10V - 25V\n• 输出电流能力 IO+/- 0.3A/0.6A\n• HIN 输入通道高电平有效，控制高端 HO 输出\n• LIN 输入通道高电平有效，控制低端 LO 输出\n• 外围器件少\n• 封装形式：SOP8\n• 无铅无卤符合 ROHS 标准;

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input imped

L-BAND PA DRIVER AMPLIFIER

DESCRIPTION The µPG2106TB and µPG2110TB are GaAs MMIC for PA driver amplifier with variable gain function which were developed for PDC (Personal Digital Cellular in Japan) and another L-band application. The device can operate with 3.0 V, having the high gain and low distortion. The µPG2106TB is

L-BAND PA DRIVER AMPLIFIER

DESCRIPTION The µPG2106TB and µPG2110TB are GaAs MMIC for PA driver amplifier with variable gain function which were developed for PDC (Personal Digital Cellular in Japan) and another L-band application. The device can operate with 3.0 V, having the high gain and low distortion. The µPG2106TB is

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan

P-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impeda