EG1120高性能、低成本离线式 PWM 控制开关

  EG1120 是一款非隔离型、高集成度且低成本的 PWM 功率开关，适用于降压型和升降压型电路。\n  EG1120 采用高压单晶圆工艺，在同一片晶圆上集成有 500V 高压 MOSFET 和采用开关式峰值电流模式控制 的控制器。在全电压输入的范围内可以保证高精度的 5V 默认输出。在芯片内部，PWM 频率固定为 31kHz 且 带有抖频功能。同时，芯片设计有轻重载模式，可轻松获得低于 50mW 的待机功耗。\n  EG1120 内置有完备的保护功能： VDD 欠压保护、逐周期电流限制、过热保护、过载保护和短路保护等。 ·默认高精度5V输出 \n ·集成500V高压 MOSFET\n ·高压启动电路\n ·超低系统成本\n ·支持降压和升降压电路\n ·开关式峰值电流模式控制\n ·待机功率小于50mW\n ·集成 31KHz 带抖频功能振荡器\n ·内置软启动\n ·超低 VDD 工作电流\n ·内置保护保护功能：\n\t\t\t   过载保护（OLP）\n\t\t\t   过热保护(OTP)\n\t\t\t   逐周期电流限制(OCP)\n\t\t\t   前沿消隐(LEB) VDD 欠压保护\n ·封装 SOT23-3L;

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Raychem Application Tooling

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Optocoupler with Phototransistor Output

Description The TCDT1120(G) series consists of a phototransis tor optically coupled to a gallium arsenide infrared emitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output fo

P-Channel Enhancement-Mode Vertical DMOS Power FETs???

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N-Channel Enhancement-Mode Vertical DMOS Power FETs???

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