N-Channel Power MOSFET

Features • 2.5V drive • Built-in gate protection resistor • Best suited for LiB charging and discharging switch • Common-drain type • Halogen free compliance

N-Channel Silicon MOSFET General-Purpose Switching Device Applications

Features • 2.5V drive • Built-in gate protection resistor • Best suited for LiB charging and discharging switch • Common-drain type • Halogen free compliance

Power MOSFET

This Power MOSFET features a low on-state resistance. This device is suitable for applications such as power switches of portable machines. Best suited for 1-2 cells lithium-ion battery applications. Features • 2.5 V drive • Common-Drain type • ESD Diode-Protected Gate • Pb-Free, Halogen Free

Power MOSFET

This Power MOSFET features a low on-state resistance. This device is suitable for applications such as power switches of portable machines. Best suited for 1-2 cells lithium-ion battery applications. Features • 2.5 V drive • Common-Drain type • ESD Diode-Protected Gate • Pb-Free, Halogen Free

N-Channel Power MOSFET

Features • 2.5V drive • Built-in gate protection resistor • Best suited for LiB charging and discharging switch • Common-drain type • Halogen free compliance

General-Purpose Switching Device Applications

Features • 2.5V drive • Built-in gate protection resistor • Best suited for LiB charging and discharging switch • Common-drain type • Halogen free compliance

General-Purpose Switching Device Applications

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General-Purpose Switching Device Applications

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N-Channel Power MOSFET

General-Purpose Switching Device Applications

文件：272.39 Kbytes Page：5 Pages

General-Purpose Switching Device Applications

文件：391.62 Kbytes Page：8 Pages

封装/外壳：4-XFBGA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：MOSFET N-CH 24V 6A EFCP 分立半导体产品 晶体管 - FET，MOSFET - 单个

MOSFET N-CH 24V 6A EFCP

封装/外壳：4-XFBGA 包装：卷带（TR） 描述：MOSFET N-CH 24V 6A EFCP 分立半导体产品 晶体管 - FET，MOSFET - 单个

MOSFET N-CH 24V 6A EFCP

N and P-Channel Enhancement Mode Power MOSFET

Description The 4612 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features ● N-Channel VDS = 60V,ID =4.5A RDS(ON)

High Q, high self-resonant frequency

Special Features • High Q, high self-resonant frequency • High voltage application • Single layer or 3-pi universal wound • Low cost • Varnish coated • Operating temperature: phenolic -55 to +125°C iron & ferrite -55 to +105°C • Current to cause 35°C maximum temperature rise

Air solenoid valve

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Heyco®-Tite Brass Liquid Tight Cordgrips

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Heyco®-Tite Brass Liquid Tight Cordgrips

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