EFC4612R价格

参考价格:¥1.2661

型号:EFC4612R-TR 品牌:ON Semiconductor 备注:这里有EFC4612R多少钱,2026年最近7天走势,今日出价,今日竞价,EFC4612R批发/采购报价,EFC4612R行情走势销售排行榜,EFC4612R报价。
型号 功能描述 生产厂家 企业 LOGO 操作
EFC4612R

N-Channel Silicon MOSFET General-Purpose Switching Device Applications

Features • 2.5V drive • Built-in gate protection resistor • Best suited for LiB charging and discharging switch • Common-drain type • Halogen free compliance

SANYO

三洋

EFC4612R

N-Channel Power MOSFET

Features • 2.5V drive • Built-in gate protection resistor • Best suited for LiB charging and discharging switch • Common-drain type • Halogen free compliance

ONSEMI

安森美半导体

EFC4612R

General-Purpose Switching Device Applications

文件:391.62 Kbytes Page:8 Pages

SANYO

三洋

EFC4612R

General-Purpose Switching Device Applications

文件:272.39 Kbytes Page:5 Pages

SANYO

三洋

EFC4612R

N-Channel Power MOSFET

ONSEMI

安森美半导体

Power MOSFET

This Power MOSFET features a low on-state resistance. This device is suitable for applications such as power switches of portable machines. Best suited for 1-2 cells lithium-ion battery applications. Features • 2.5 V drive • Common-Drain type • ESD Diode-Protected Gate • Pb-Free, Halogen Free

ONSEMI

安森美半导体

Power MOSFET

This Power MOSFET features a low on-state resistance. This device is suitable for applications such as power switches of portable machines. Best suited for 1-2 cells lithium-ion battery applications. Features • 2.5 V drive • Common-Drain type • ESD Diode-Protected Gate • Pb-Free, Halogen Free

ONSEMI

安森美半导体

N-Channel Power MOSFET

Features • 2.5V drive • Built-in gate protection resistor • Best suited for LiB charging and discharging switch • Common-drain type • Halogen free compliance

ONSEMI

安森美半导体

General-Purpose Switching Device Applications

Features • 2.5V drive • Built-in gate protection resistor • Best suited for LiB charging and discharging switch • Common-drain type • Halogen free compliance

ONSEMI

安森美半导体

General-Purpose Switching Device Applications

文件:272.39 Kbytes Page:5 Pages

SANYO

三洋

General-Purpose Switching Device Applications

文件:391.62 Kbytes Page:8 Pages

SANYO

三洋

封装/外壳:4-XFBGA 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:MOSFET N-CH 24V 6A EFCP 分立半导体产品 晶体管 - FET,MOSFET - 单个

ONSEMI

安森美半导体

MOSFET N-CH 24V 6A EFCP

ONSEMI

安森美半导体

封装/外壳:4-XFBGA 包装:卷带(TR) 描述:MOSFET N-CH 24V 6A EFCP 分立半导体产品 晶体管 - FET,MOSFET - 单个

ONSEMI

安森美半导体

MOSFET N-CH 24V 6A EFCP

ONSEMI

安森美半导体

N and P-Channel Enhancement Mode Power MOSFET

Description The 4612 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features ● N-Channel VDS = 60V,ID =4.5A RDS(ON)

TUOFENG

拓锋半导体

High Q, high self-resonant frequency

Special Features • High Q, high self-resonant frequency • High voltage application • Single layer or 3-pi universal wound • Low cost • Varnish coated • Operating temperature: phenolic -55 to +125°C iron & ferrite -55 to +105°C • Current to cause 35°C maximum temperature rise

ETCList of Unclassifed Manufacturers

未分类制造商

Heyco®-Tite Brass Liquid Tight Cordgrips

文件:469.89 Kbytes Page:1 Pages

HEYCO

Heyco®-Tite Brass Liquid Tight Cordgrips

文件:87.7 Kbytes Page:1 Pages

HEYCO

Air solenoid valve

文件:84.62 Kbytes Page:1 Pages

FESTOFesto Corporation.

费斯托费斯托(中国)有限公司

EFC4612R产品属性

  • 类型

    描述

  • 型号

    EFC4612R

  • 制造商

    SANYO

  • 制造商全称

    Sanyo Semicon Device

  • 功能描述

    N-Channel Silicon MOSFET General-Purpose Switching Device Applications

更新时间:2026-1-27 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
onsemi
25+
EFCP1313-4CC-037
21000
正规渠道,免费送样。支持账期,BOM一站式配齐
onsemi
25+
EFCP1313-4CC-037
21000
正规渠道,免费送样。支持账期,BOM一站式配齐
ONSemi
24+
WLCSP-4
5000
十年沉淀唯有原装
ON
21+
WLCSP-4
10000
绝对公司现货,不止网上数量!原装正品,假一赔十!
ON/安森美
NA
275000
一级代理原装正品,价格优势,长期供应!
ON/安森美
23+
NA
9000
原装正品假一罚百!可开增票!
ON(安森美)
23+
WLCSP-4
18957
公司只做原装正品,假一赔十
ON/安森美
25+
NA
30000
房间原装现货特价热卖,有单详谈
ON
23+
WLCSP-4
7850
只做原装正品假一赔十为客户做到零风险!!
ONSEMI
25+
NA
7000
全新原装!优势库存热卖中!

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