N-Channel Power MOSFET

Features • 2.5V drive • Built-in gate protection resistor • Best suited for LiB charging and discharging switch • Common-drain type • Halogen free compliance

General-Purpose Switching Device Applications

Features • 2.5V drive • Built-in gate protection resistor • Best suited for LiB charging and discharging switch • Common-drain type • Halogen free compliance

MOSFET N-CH 24V 6A EFCP

N and P-Channel Enhancement Mode Power MOSFET

Description The 4612 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features ● N-Channel VDS = 60V,ID =4.5A RDS(ON)

High Q, high self-resonant frequency

Special Features • High Q, high self-resonant frequency • High voltage application • Single layer or 3-pi universal wound • Low cost • Varnish coated • Operating temperature: phenolic -55 to +125°C iron & ferrite -55 to +105°C • Current to cause 35°C maximum temperature rise

Heyco®-Tite Brass Liquid Tight Cordgrips

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Heyco®-Tite Brass Liquid Tight Cordgrips

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Air solenoid valve

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