Low Distortion GaAs Power FET

Low Distortion GaAs Power FET • +34.0dBm TYPICAL OUTPUT POWER • 18.0dB TYPICAL POWER GAIN AT 2GHz • 0.5 X 4800 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION AND PLATED HEAT SINK • ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY • Idss SORTED

8-12V low distortion GaAs power FET

Low Distortion GaAs Power FET

Low Distortion GaAs Power FET • NON-HERMETIC 180MIL METAL FLANGE PACKAGE • +34.0dBm TYPICAL OUTPUT POWER • 16.5dB TYPICAL POWER GAIN AT 2GHz • 0.5 X 4800 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES EXTRA HIGH POWER EFFICIENCY, AND

Low Distortion GaAs Power FET

FEATURES • NON-HERMETIC SURFACE MOUNT 160MIL METAL CERAMIC PACKAGE • +33.5 dBm OUTPUT POWER AT 1dB COMPRESSION • 16.0 dB GAIN AT 2 GHz • 0.5x4800 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES EXTRA HIGH POWER EFFICIENCY, AND HIGH REL

DC-4GHz Low Distortion GaAs Power FET

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NPN wideband transistor

DESCRIPTION NPN double polysilicon wideband transistor with buried layer for low voltage applications in a 4-pin dual-emitter SOT343R plastic package. FEATURES • High power gain • High efficiency • Low noise figure • High transition frequency • Emitter is thermal lead • Low feedback capaci

丝印代码：P6；NPN wideband transistor

DESCRIPTION NPN double polysilicon wideband transistor with buried layer for low voltage applications in a 4-pin dual-emitter SOT343R plastic package. FEATURES • High power gain • High efficiency • Low noise figure • High transition frequency • Emitter is thermal lead • Low feedback capaci

Silicon NPN Transistor RF Power Output for Broadband Amp, PO = 40W @ 512MHz

Description: The NTE480 is a 12.5 Volt epitaxial silicon NPN common emitter transistor designed for broadband applications in the 450 to 512MHz land mobile radio band. This device utilizes diffused emitter resistors to withstand infinite VSWR under operating conditions. Features: • Desi

Metal Oxide Varistors (MOV)

Description: The NTE Metal Oxide Varistors feature a barrier layer that gives the user fast response time. These devices have a high transient current handling capability when high voltage is applied. Static resistance is, however, very high under low voltage conditions, permitting low standby

Shottky barrier diode

Features High reliability Small mold type Low VF Application Small current rectification