DESCRIPTION

NPN double polysilicon wideband transistor with buried layer for low voltage applications in a 4-pin dual-emitter SOT343R plastic package.

FEATURES

• High power gain

• High efficiency

• Low noise figure

• High transition frequency

• Emitter is thermal lead

• Low feedback capacitance

• Linear and non-linear operation.

APPLICATIONS

• RF front end with high linearity system demands (CDMA)

• Common emitter class AB driver.