Low Distortion GaAs Power FET

Low Distortion GaAs Power FET • +25.0dBm TYPICAL OUTPUT POWER • 10.5dB TYPICAL POWER GAIN FOR EFA060B AND 12.0dB FOR EFA060BV AT 12GHz • 0.3 X 600 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY

Low Distortion GaAs Power FET

Low Distortion GaAs Power FET • NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE • +24.0dBm TYPICAL OUTPUT POWER • 7.5 dB TYPICAL POWER GAIN AT 12GHz • 0.3 X 600 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND R

Low Distortion GaAs Power FET

[Excelics] Low Distortion GaAs Power FET • NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE • +24.0dBm TYPICAL OUTPUT POWER • 7.5 dB TYPICAL POWER GAIN AT 12GHz • 0.3 X 600 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LIN

Low Distortion GaAs Power FET

Low Distortion GaAs Power FET • +25.0dBm TYPICAL OUTPUT POWER • 10.5dB TYPICAL POWER GAIN FOR EFA060B AND 12.0dB FOR EFA060BV AT 12GHz • 0.3 X 600 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY

Low Distortion GaAs Power FET

HBT Series . Half-Brick DC/DC Converter 48V Input 60 Watt Triple Output

Description The HBT17ZGHH DC-DC Converter operates over an input voltage range of 33Vdc to 75Vdc and provides three isolated output voltages. The 5V output can provide a full 60W (12 Amperes) of output power and each 12V output can provide up to 30W (2.5 Amperes) of output power. The input is f

HAS SERIES - 60 WATT

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HAS SERIES - 60 WATT

文件：177.19 Kbytes Page：3 Pages

HBD SERIES - DUAL OUTPUT, 60 WATT

文件：183.38 Kbytes Page：3 Pages

HBD SERIES - DUAL OUTPUT, 60 WATT

文件：183.38 Kbytes Page：3 Pages