Low Distortion GaAs Power FET

Low Distortion GaAs Power FET • +25.0dBm TYPICAL OUTPUT POWER • 10.5dB TYPICAL POWER GAIN FOR EFA060B AND 12.0dB FOR EFA060BV AT 12GHz • 0.3 X 600 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY

IGLOO Low Power Flash FPGAs with Flash*Freeze Technology

General Description The IGLOO family of flash FPGAs, based on a 130-nm flash process, offers the lowest power FPGA, a single-chip solution, small footprint packages, reprogrammability, and an abundance of advanced features. Features and Benefits Low Power • 1.2 V to 1.5 V Core Voltage Support

POLYSTYRENE/ POLYCARBONATE ENCLOSURE ABOX 060

文件：142.49 Kbytes Page：1 Pages

IGLOO nano Low Power Flash FPGAsnull

文件：7.69124 Mbytes Page：150 Pages

IGLOO nano Low Power Flash FPGAsnull

文件：7.69124 Mbytes Page：150 Pages

IGLOO PLUS Low Power Flash FPGAs with Flash*Freeze Technology

文件：4.39371 Mbytes Page：128 Pages