Low Distortion GaAs Power FET

Low Distortion GaAs Power FET • NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE • +24.0dBm TYPICAL OUTPUT POWER • 7.5 dB TYPICAL POWER GAIN AT 12GHz • 0.3 X 600 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND R

Low Distortion GaAs Power FET

[Excelics] Low Distortion GaAs Power FET • NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE • +24.0dBm TYPICAL OUTPUT POWER • 7.5 dB TYPICAL POWER GAIN AT 12GHz • 0.3 X 600 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LIN

Low Distortion GaAs Power FET

High Efficiency Heterojunction Power FET

[Excelics] High Efficiency Heterojunction Power FET Features • NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE • +26dBm TYPICAL OUTPUT POWER • 9.0dB TYPICAL POWER GAIN AT 12 GHZ • 0.4 dB TYPICAL NOISE FIGURE AT 2GHz • 20 dB TYPICAL ASSOCIATED GAIN AT 2 GHz • 0.3 X 600 MICRON RECESSED “MUSHROOM

High Efficiency Heterojunction Power FET

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