Low Distortion GaAs Power FET

Low Distortion GaAs Power FET • +21.0dBm TYPICAL OUTPUT POWER • 11.0dB TYPICAL POWER GAIN AT 12GHz • TYPICAL 1.5 dB NOISE FIGURE AND 10 dB ASSOCIATED GAIN AT 12GHz • 0.3 X 250 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIEN

6-12V low distortion GaAs power FET

Low Distortion GaAs Power FET

FEATURES • None-Hermetic Low Cost Ceramic 70mil Package • +20.0 dBm Output Power at 1dB Compression • 10.0 dB Power Gain at 12GHz • 7.0 dB Power Gain at 18GHz • Typical 1.50 dB Noise Figure and 10.0 dB Associated Gain at 12GHz • 0.3 x 250 Micron Recessed “Mushroom” Gate • Si3N4 Passivation

Low Distortion GaAs Power FET

FEATURES • None-Hermetic Low Cost Ceramic 70mil Package • +20.0 dBm Output Power at 1dB Compression • 10.0 dB Power Gain at 12GHz • 7.0 dB Power Gain at 18GHz • Typical 1.50 dB Noise Figure and 10.0 dB Associated Gain at 12GHz • 0.3 x 250 Micron Recessed “Mushroom” Gate • Si3N4 Passivation

Low Distortion GaAs Power FET

[Excelics] Low Distortion GaAs Power FET • NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE • +20.0dBm TYPICAL OUTPUT POWER • 10.0dB TYPICAL POWER GAIN AT 12GHz • TYPICAL 1.5dB NOISE FIGURE AND 10dB ASSOCIATED GAIN AT 12GHz • 0.3 X 250 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVAN

High Gain GaAs Power FET

[Excelics] High Gain GaAs Power FET • +20.0dBm TYPICAL OUTPUT POWER • 11.5dB TYPICAL POWER GAIN AT 12GHz • 0.3 X 250 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY • Idss SORTED IN 5mA PER BIN

High Gain GaAs Power FET

High Gain GaAs Power FET • +20.0dBm TYPICAL OUTPUT POWER • 11.5dB TYPICAL POWER GAIN AT 12GHz • 0.3 X 250 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY • Idss SORTED IN 5mA PER BIN RANGE

Low Distortion GaAs Power FET

Low Distortion GaAs Power FET

SCRs

General Description The Teccor line of thyristor SCR semi-conductors are half-wave, unidirectional, gate-controlled rectifiers which complement Teccors line of sensitive SCRs. Teccor offers devices with ratings of 1 A to 70 A and 200 V to 1000 V, with gate sensitivities from 10 mA to 50 mA. If ga

SCRs

General Description The Teccor line of thyristor SCR semi-conductors are half-wave, unidirectional, gate-controlled rectifiers which complement Teccors line of sensitive SCRs. Teccor offers devices with ratings of 1 A to 70 A and 200 V to 1000 V, with gate sensitivities from 10 mA to 50 mA. If ga

SCRs

General Description The Teccor line of thyristor SCR semi-conductors are half-wave, unidirectional, gate-controlled rectifiers which complement Teccors line of sensitive SCRs. Teccor offers devices with ratings of 1 A to 70 A and 200 V to 1000 V, with gate sensitivities from 10 mA to 50 mA. If ga

HIGH VOLTAGE IGNITION COIL DRIVER POWER IC

DESCRIPTION The VB025BSP is a high voltage power integrated circuit made using STMicroelectronics VIPower Technology, with vertical current flow power darlington and logic level compatible driving circuit. Built-in protection circuits for coil current limiting and collector voltage clampi

HIGH VOLTAGE IGNITION COIL DRIVER POWER IC

DESCRIPTION The VB025SP is a high voltage power integrated circuit made using STMicroelectronics VIPower Technology, with vertical current flow power darlington and logic level compatible driving circuit. Built-in protection circuits for coil current limiting and collector voltage clampin