High Gain GaAs Power FET

High Gain GaAs Power FET • +20.0dBm TYPICAL OUTPUT POWER • 11.5dB TYPICAL POWER GAIN AT 12GHz • 0.3 X 250 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY • Idss SORTED IN 5mA PER BIN RANGE

High Gain GaAs Power FET

[Excelics] High Gain GaAs Power FET • +20.0dBm TYPICAL OUTPUT POWER • 11.5dB TYPICAL POWER GAIN AT 12GHz • 0.3 X 250 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY • Idss SORTED IN 5mA PER BIN

ISOLATED, PROPORTIONAL DC TO HV DC CONVERTERS

PRODUCT DESCRIPTION The A Series is a new line of ultra-miniature, DC to HV DC converters that set an industry standard in high voltage miniaturization. This unique package occupies less than one tenth of a cubic inch of volume*5, and features an extremely low profle of only 0.250 inches (6.35mm)

MLX91221 Integrated Current Sensor IC

Features and Benefits ▪ Factory trimmed AC and DC current sensor ▪ Analog ratiometric or fixed output voltage ▪ Combining sensing element, signal conditioning & isolation in SOIC package ▪ No application programming required ▪ High speed sensing ▪ DC to 300kHz bandwidth ▪ 2μs response time

MLX91221 Integrated Current Sensor IC

Features and Benefits ▪ Factory trimmed AC and DC current sensor ▪ Analog ratiometric or fixed output voltage ▪ Combining sensing element, signal conditioning & isolation in SOIC package ▪ No application programming required ▪ High speed sensing ▪ DC to 300kHz bandwidth ▪ 2μs response time

Super Fast-Acting Fuse

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Fast-Acting Fuse

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