Low Distortion GaAs Power FET

FEATURES • None-Hermetic Low Cost Ceramic 70mil Package • +20.0 dBm Output Power at 1dB Compression • 10.0 dB Power Gain at 12GHz • 7.0 dB Power Gain at 18GHz • Typical 1.50 dB Noise Figure and 10.0 dB Associated Gain at 12GHz • 0.3 x 250 Micron Recessed “Mushroom” Gate • Si3N4 Passivation

Low Distortion GaAs Power FET

[Excelics] Low Distortion GaAs Power FET • NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE • +20.0dBm TYPICAL OUTPUT POWER • 10.0dB TYPICAL POWER GAIN AT 12GHz • TYPICAL 1.5dB NOISE FIGURE AND 10dB ASSOCIATED GAIN AT 12GHz • 0.3 X 250 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVAN

Low Distortion GaAs Power FET

Low Noise High Gain Heterojunction FET

Low Noise High Gain Heterojunction FET • NON-HERMETIC LOW COST CERAMIC 70 mil PACKAGE • TYPICAL 0.85dB NOISE FIGURE AND 10.5dB ASSOCIATED GAIN AT 12GHz • 0.3 X 250 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAXIAL DOPING PROFILE PROVIDES SUPER LOW NOISE, HIGH GA

High Efficiency Heterojunction Power FET

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High Efficiency Heterojunction Power FET

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