256M bits SDRAM

Description The EDS2516AP is a 256M bits SDRAM organized as 4,194,304 words × 16 bits × 4 banks. All inputs and outputs are referred to the rising edge of the clock input. It is packaged in standard 54-pin plastic TSOP (II) Features • 3.3V power supply • Clock frequency: 166MHz/133MHz (max.)

256M bits SDRAM

Description The EDS2504AC/AP is a 256M bits SDRAM organized as 16,777,216 words × 4 bits × 4 banks. The EDS2508 AC/AP is a 256M bits SDRAM organized as 8,388,608 words × 8 bits × 4 banks. The EDS2516 AC/AP is a 256M bits SDRAM organized as 4194304 words × 16 bits × 4 banks. All inputs and outputs

256M bits SDRAM

Description\nThe EDS2516AP is a 256M bits SDRAM organized as 4,194,304 words × 16 bits × 4 banks. All inputs and outputs are referred to the rising edge of the clock input. It is packaged in standard 54-pin plastic TSOP (II) • 3.3V power supply\n• LVTTL interface\n• ×16 organization\n• Burst read/write operation and burst read/single write operation capability\n• 2 variations of burst sequence\n• Programmable /CAS latency (CL): 2, 3\n• 2 variations of refresh\n• 2 types of TSOP (II) package\n   - Sn-Pb solder\n   - Lead;

256M bits SDRAM

Description The EDS2516AP is a 256M bits SDRAM organized as 4,194,304 words × 16 bits × 4 banks. All inputs and outputs are referred to the rising edge of the clock input. It is packaged in standard 54-pin plastic TSOP (II) Features • 3.3V power supply • Clock frequency: 166MHz/133MHz (max.)

256M bits SDRAM

Description The EDS2516AP is a 256M bits SDRAM organized as 4,194,304 words × 16 bits × 4 banks. All inputs and outputs are referred to the rising edge of the clock input. It is packaged in standard 54-pin plastic TSOP (II) Features • 3.3V power supply • Clock frequency: 166MHz/133MHz (max.)

256M bits SDRAM

Description The EDS2516AP is a 256M bits SDRAM organized as 4,194,304 words × 16 bits × 4 banks. All inputs and outputs are referred to the rising edge of the clock input. It is packaged in standard 54-pin plastic TSOP (II) Features • 3.3V power supply • Clock frequency: 166MHz/133MHz (max.)

256M bits SDRAM

Description The EDS2516AP is a 256M bits SDRAM organized as 4,194,304 words × 16 bits × 4 banks. All inputs and outputs are referred to the rising edge of the clock input. It is packaged in standard 54-pin plastic TSOP (II) Features • 3.3V power supply • Clock frequency: 166MHz/133MHz (max.)

256M bits SDRAM

Description The EDS2516AP is a 256M bits SDRAM organized as 4,194,304 words × 16 bits × 4 banks. All inputs and outputs are referred to the rising edge of the clock input. It is packaged in standard 54-pin plastic TSOP (II) Features • 3.3V power supply • Clock frequency: 166MHz/133MHz (max.)

256M bits SDRAM

Description The EDS2504AC/AP is a 256M bits SDRAM organized as 16,777,216 words × 4 bits × 4 banks. The EDS2508 AC/AP is a 256M bits SDRAM organized as 8,388,608 words × 8 bits × 4 banks. The EDS2516 AC/AP is a 256M bits SDRAM organized as 4194304 words × 16 bits × 4 banks. All inputs and outputs

256M bits SDRAM

Description The EDS2516AP is a 256M bits SDRAM organized as 4,194,304 words × 16 bits × 4 banks. All inputs and outputs are referred to the rising edge of the clock input. It is packaged in standard 54-pin plastic TSOP (II) Features • 3.3V power supply • Clock frequency: 166MHz/133MHz (max.)

256M bits SDRAM

Description The EDS2504AC/AP is a 256M bits SDRAM organized as 16,777,216 words × 4 bits × 4 banks. The EDS2508 AC/AP is a 256M bits SDRAM organized as 8,388,608 words × 8 bits × 4 banks. The EDS2516 AC/AP is a 256M bits SDRAM organized as 4194304 words × 16 bits × 4 banks. All inputs and outputs

256M bits SDRAM

Description The EDS2516AP is a 256M bits SDRAM organized as 4,194,304 words × 16 bits × 4 banks. All inputs and outputs are referred to the rising edge of the clock input. It is packaged in standard 54-pin plastic TSOP (II) Features • 3.3V power supply • Clock frequency: 166MHz/133MHz (max.)

256M bits SDRAM

Description The EDS2516AP is a 256M bits SDRAM organized as 4,194,304 words × 16 bits × 4 banks. All inputs and outputs are referred to the rising edge of the clock input. It is packaged in standard 54-pin plastic TSOP (II) Features • 3.3V power supply • Clock frequency: 166MHz/133MHz (max.)

256M bits SDRAM WTR (Wide Temperature Range)

Description The EDS2504AC/AP is a 256M bits SDRAM organized as 16,777,216 words × 4 bits × 4 banks. The EDS2508 AC/AP is a 256M bits SDRAM organized as 8,388,608 words × 8 bits × 4 banks. The EDS2516 AC/AP is a 256M bits SDRAM organized as 4194304 words × 16 bits × 4 banks. All inputs and outputs

256M bits SDRAM WTR (Wide Temperature Range)

Description The EDS2516APTA is a 256M bits SDRAM organized as 4194304 words × 16 bits × 4 banks. All inputs and outputs are referred to the rising edge of the clock input. It is packaged in 54-pin plastic TSOP (II). Features • 3.3V power supply • Clock frequency: 133MHz (max.) • LVTTL interfa

256M bits SDRAM

Description The EDS2516AP is a 256M bits SDRAM organized as 4,194,304 words × 16 bits × 4 banks. All inputs and outputs are referred to the rising edge of the clock input. It is packaged in standard 54-pin plastic TSOP (II) Features • 3.3V power supply • Clock frequency: 166MHz/133MHz (max.)

256M bits SDRAM

Description The EDS2504AC/AP is a 256M bits SDRAM organized as 16,777,216 words × 4 bits × 4 banks. The EDS2508 AC/AP is a 256M bits SDRAM organized as 8,388,608 words × 8 bits × 4 banks. The EDS2516 AC/AP is a 256M bits SDRAM organized as 4194304 words × 16 bits × 4 banks. All inputs and outputs

256M bits SDRAM

Description The EDS2516AP is a 256M bits SDRAM organized as 4,194,304 words × 16 bits × 4 banks. All inputs and outputs are referred to the rising edge of the clock input. It is packaged in standard 54-pin plastic TSOP (II) Features • 3.3V power supply • Clock frequency: 166MHz/133MHz (max.)

256M bits SDRAM

Description The EDS2516AP is a 256M bits SDRAM organized as 4,194,304 words × 16 bits × 4 banks. All inputs and outputs are referred to the rising edge of the clock input. It is packaged in standard 54-pin plastic TSOP (II) Features • 3.3V power supply • Clock frequency: 166MHz/133MHz (max.)

256M bits SDRAM

Description The EDS2504AC/AP is a 256M bits SDRAM organized as 16,777,216 words × 4 bits × 4 banks. The EDS2508 AC/AP is a 256M bits SDRAM organized as 8,388,608 words × 8 bits × 4 banks. The EDS2516 AC/AP is a 256M bits SDRAM organized as 4194304 words × 16 bits × 4 banks. All inputs and outputs

256M bits SDRAM

Description The EDS2516AP is a 256M bits SDRAM organized as 4,194,304 words × 16 bits × 4 banks. All inputs and outputs are referred to the rising edge of the clock input. It is packaged in standard 54-pin plastic TSOP (II) Features • 3.3V power supply • Clock frequency: 166MHz/133MHz (max.)

256M bits SDRAM WTR (Wide Temperature Range)

Description The EDS2504AC/AP is a 256M bits SDRAM organized as 16,777,216 words × 4 bits × 4 banks. The EDS2508 AC/AP is a 256M bits SDRAM organized as 8,388,608 words × 8 bits × 4 banks. The EDS2516 AC/AP is a 256M bits SDRAM organized as 4194304 words × 16 bits × 4 banks. All inputs and outputs

256M bits SDRAM WTR (Wide Temperature Range)

Description The EDS2504AC/AP is a 256M bits SDRAM organized as 16,777,216 words × 4 bits × 4 banks. The EDS2508 AC/AP is a 256M bits SDRAM organized as 8,388,608 words × 8 bits × 4 banks. The EDS2516 AC/AP is a 256M bits SDRAM organized as 4194304 words × 16 bits × 4 banks. All inputs and outputs

256M bits SDRAM WTR (Wide Temperature Range)

Description The EDS2516APTA is a 256M bits SDRAM organized as 4194304 words × 16 bits × 4 banks. All inputs and outputs are referred to the rising edge of the clock input. It is packaged in 54-pin plastic TSOP (II). Features • 3.3V power supply • Clock frequency: 133MHz (max.) • LVTTL interfa

256M bits SDRAM WTR (Wide Temperature Range)

Description\nThe EDS2516APTA is a 256M bits SDRAM organized as 4194304 words × 16 bits × 4 banks. All inputs and outputs are referred to the rising edge of the clock input. It is packaged in 54-pin plastic TSOP (II). • 3.3V power supply\n• Clock frequency: 133MHz (max.)\n• LVTTL interface\n• Single pulsed /RAS\n• ×16 organization\n• 4 banks can operate simultaneously and independently\n• Burst read/write operation and burst read/single write operation capability\n• Programmable burst length (BL): 1, 2, 4, 8, ful;

Electronic View-Finder Driving IC with Character Input

■ Features • Built-in video amplifier, synchronous signal separa tion, horizontal vertical oscillator, AFC, γ correction, character mixing, and vertical driver circuits. • Direct drive of a vertical deflection coil available • Built-in capacitor for vertical synchronous signal separation

Silicon Complementary Transistors High Current Switch

Features: Low Collector Emitter Saturation Voltage High Gain–Bandwidth Product Excellent Linearity of hFE Fast Switching Time Applications: Display Drivers High Speed Inverters Converters

SCR

DESCRIPTION The S25xxxH series of SCRs uses a high performance MESA GLASS PNPN technology. These parts are intended for general purpose applications. FEATURES ■ IT(RMS) = 25A ■ VDRM = 200V to 800V ■ High surge current capability

SCR

DESCRIPTION The S25xxxH series of SCRs uses a high performance MESA GLASS PNPN technology. These parts are intended for general purpose applications. FEATURES ■ IT(RMS) = 25A ■ VDRM = 200V to 800V ■ High surge current capability

SCR

DESCRIPTION The S25xxxH series of SCRs uses a high performance MESA GLASS PNPN technology. These parts are intended for general purpose applications. FEATURES ■ IT(RMS) = 25A ■ VDRM = 200V to 800V ■ High surge current capability