512M bits DDR-II SDRAM

文件：491.65 Kbytes Page：45 Pages

512M bits DDR-II SDRAM

文件：491.65 Kbytes Page：45 Pages

512M bits DDR-II SDRAM

文件：491.65 Kbytes Page：45 Pages

512M bits DDR-II SDRAM

Description The EDE5104GB is a 512M bits DDR-II SDRAM organized as 33,554,432 words × 4 bits × 4 banks. The EDE5108GB is a 512M bits DDR-II SDRAM organized as 16,777,216 words × 8 bits × 4 banks. It packaged in 64-ball µBGA® package. Features • 1.8V power supply • Double-data-rate architectur

512M bits DDR SDRAM

Description The EDD5104AB is a 512M bits Double Data Rate (DDR) SDRAM organized as 33,554,432 words × 4 bits × 4 banks. The EDD5108AB is a 512M bits DDR SDRAM organized as 16,777,216 words × 8 bits × 4 banks. Read and write operations are performed at the cross points of the CK and the /CK. This

512M bits SDRAM

Elpida is Now Micron. EDS5104ABTA (128M words x 4 bits) EDS5108ABTA (64M words x 8 bits) EDS5116ABTA (32M words x 16 bits) The EDS5104AB is a 512M bits SDRAM organized as 33,554,432 words ×4 bits ×4 banks. The EDS5108AB is a 512M bits SDRAM organized as 16,777,216 word

Ka-Band 3-Stage Self Bias Low Noise Amplifier

DESCRIPTION The MGFC5108 is a GaAs MMIC chip especially designed for 24.0 ~ 27.0 GHz band Low Noise Amplifier.(LNA) . FEATURES ● RF frequency : 24.0 to 27.0 GHz ● Super Low Noise NF=2.5dB (TYP.) ● Single voltage operation

PHOTOMULTlPLlER TUBE

28 mm (1-1/8 Inch) Transmission Mode S–1 Photocathode, Side–on Type FEATURES ● Wide Photocathode ● High Infrared Sensitivity ● Excellent Spatial Uniformity ● Fast Time Response APPLICATIONS ● Near Infrared Spectrophotometer ● Raman Spectrophotometer ● Photo Luminescence Measurement