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型号 功能描述 生产厂家 企业 LOGO 操作
EDE5108GBSA

512M bits DDR-II SDRAM

Description The EDE5104GB is a 512M bits DDR-II SDRAM organized as 33,554,432 words × 4 bits × 4 banks. The EDE5108GB is a 512M bits DDR-II SDRAM organized as 16,777,216 words × 8 bits × 4 banks. It packaged in 64-ball µBGA® package. Features • 1.8V power supply • Double-data-rate architectur

ELPIDA

尔必达

512M bits DDR-II SDRAM

Description The EDE5104GB is a 512M bits DDR-II SDRAM organized as 33,554,432 words × 4 bits × 4 banks. The EDE5108GB is a 512M bits DDR-II SDRAM organized as 16,777,216 words × 8 bits × 4 banks. It packaged in 64-ball µBGA® package. Features • 1.8V power supply • Double-data-rate architectur

ELPIDA

尔必达

512M bits DDR-II SDRAM

Description The EDE5104GB is a 512M bits DDR-II SDRAM organized as 33,554,432 words × 4 bits × 4 banks. The EDE5108GB is a 512M bits DDR-II SDRAM organized as 16,777,216 words × 8 bits × 4 banks. It packaged in 64-ball µBGA® package. Features • 1.8V power supply • Double-data-rate architectur

ELPIDA

尔必达

512M bits DDR SDRAM

Description The EDD5104AB is a 512M bits Double Data Rate (DDR) SDRAM organized as 33,554,432 words × 4 bits × 4 banks. The EDD5108AB is a 512M bits DDR SDRAM organized as 16,777,216 words × 8 bits × 4 banks. Read and write operations are performed at the cross points of the CK and the /CK. This

ELPIDA

尔必达

512M bits SDRAM

Elpida is Now Micron. EDS5104ABTA (128M words x 4 bits) EDS5108ABTA (64M words x 8 bits) EDS5116ABTA (32M words x 16 bits) The EDS5104AB is a 512M bits SDRAM organized as 33,554,432 words ×4 bits ×4 banks. The EDS5108AB is a 512M bits SDRAM organized as 16,777,216 word

ELPIDA

尔必达

Ka-Band 3-Stage Self Bias Low Noise Amplifier

DESCRIPTION The MGFC5108 is a GaAs MMIC chip especially designed for 24.0 ~ 27.0 GHz band Low Noise Amplifier.(LNA) . FEATURES ● RF frequency : 24.0 to 27.0 GHz ● Super Low Noise NF=2.5dB (TYP.) ● Single voltage operation

MITSUBISHI

三菱电机

PHOTOMULTlPLlER TUBE

28 mm (1-1/8 Inch) Transmission Mode S–1 Photocathode, Side–on Type FEATURES ● Wide Photocathode ● High Infrared Sensitivity ● Excellent Spatial Uniformity ● Fast Time Response APPLICATIONS ● Near Infrared Spectrophotometer ● Raman Spectrophotometer ● Photo Luminescence Measurement

HAMAMATSUHamamatsu Photonics Co.,Ltd.

滨松光子滨松光子学株式会社

EDE5108GBSA产品属性

  • 类型

    描述

  • 型号

    EDE5108GBSA

  • 制造商

    ELPIDA

  • 制造商全称

    Elpida Memory

  • 功能描述

    512M bits DDR-II SDRAM

更新时间:2026-5-20 8:03:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ELPIDA
23+
BGA
8560
受权代理!全新原装现货特价热卖!
ELPIDA/尔必达
11+
BGA
2284
ELPIDA
11+
BGA
3400
全新原装进口自己库存优势
ELPIDA
24+
BGA
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
ELPIDA
0940+
BGA
416
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ELPIDA
2026+
BGA
47251
原装正品 假一罚十!
ELPIDAMEMORYINC
23+
NA
646
专做原装正品,假一罚百!
ELPIDA
2450+
BGA
6540
只做原厂原装正品现货或订货!终端工厂可以申请样品!
ELPIDA
25+
BGA
2658
原装正品!现货供应!
ELPIDA
24+
BGA
150

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