BATTERIES AND BATTERY CHARGERS

48W 3 stage 12V or 24V lead acid battery charger\n\nED1048 Series; 60 Watts; 3 Stage Lead Acid Battery Charger; IEC320 3 Pin Input Connector; Flying Lead Output\n\n

Bobbintron Electrical Corporation

文件：1.7929 Mbytes Page：36 Pages

Bobbintron Electrical Corporation

文件：1.7929 Mbytes Page：36 Pages

Bobbintron Electrical Corporation

文件：1.7929 Mbytes Page：36 Pages

Bobbintron Electrical Corporation

文件：1.7929 Mbytes Page：36 Pages

Bobbintron Electrical Corporation

文件：1.7929 Mbytes Page：36 Pages

UHF power LDMOS transistor

DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT502A) with a ceramic cap. The common source is connected to the mounting flange. FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on underside el

3.3V LVDS 4-Bit Flow-Through High Speed Differential Receiver

General Description This quad receiver is designed for high speed interconnect utilizing Low Voltage Differential Signaling (LVDS) technology. The receiver translates LVDS levels, with a typical differential input threshold of 100mV, to LVTTL signal levels. LVDS provides low EMI at ultra low po

NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

FEATURES * VCEO = 17.5V * 5 Amp Continuous Current * 20 Amp Pulse Current * Low Saturation Voltage * High Gain * Extremely Low Equivalent On-resistance; RCE(sat) = 50mΩ at 5A

DUAL NPN MEDIUM POWER HIGH GAIN TRANSISTORS

Summary BVCEO > 17.5V IC(cont) = 5A VCE(sat) Description Advanced process capability has been used to achieve this high performance device. Combining two NPN transistors in the SM-8 package provides a compact solution for the intended applications. Features • Dual NPN device

NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

FEATURES * VCEV=50V * Very Low Saturation Voltages * High Gain * 20 Amps pulse current APPLICATIONS * LCD Backlight Convertors * Emergency Lighting * DC-DC Convertors