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ECQ-E2106KF价格

参考价格:¥8.2111

型号:ECQ-E2106KF 品牌:PANASONIC 备注:这里有ECQ-E2106KF多少钱,2026年最近7天走势,今日出价,今日竞价,ECQ-E2106KF批发/采购报价,ECQ-E2106KF行情走势销售排行榜,ECQ-E2106KF报价。
型号 功能描述 生产厂家 企业 LOGO 操作
ECQ-E2106KF

Self-healing property

Metallized Polyester Film Capacitor Non-inductive construction using metallized Polyester film with flame retardant epoxy resin coating ■ Features • Self-healing property • Excellent electrical characteristics • Flame retardant epoxy resin coating • RoHS directive compliant ■ Recommended Ap

PANASONIC

松下

ECQ-E2106KF

封装/外壳:径向 包装:散装 描述:CAP FILM 10UF 10% 250VDC RADIAL 电容器 薄膜电容器

PANASONIC

松下

封装/外壳:径向 包装:卷带(TR) 描述:CAP FILM 10UF 10% 250VDC RADIAL 电容器 薄膜电容器

PANASONIC

松下

薄膜电容

PANASONIC

松下

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input imped

SUTEX

L-BAND PA DRIVER AMPLIFIER

DESCRIPTION The µPG2106TB and µPG2110TB are GaAs MMIC for PA driver amplifier with variable gain function which were developed for PDC (Personal Digital Cellular in Japan) and another L-band application. The device can operate with 3.0 V, having the high gain and low distortion. The µPG2106TB is

NEC

瑞萨

L-BAND PA DRIVER AMPLIFIER

DESCRIPTION The µPG2106TB and µPG2110TB are GaAs MMIC for PA driver amplifier with variable gain function which were developed for PDC (Personal Digital Cellular in Japan) and another L-band application. The device can operate with 3.0 V, having the high gain and low distortion. The µPG2106TB is

NEC

瑞萨

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan

SUTEX

P-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impeda

SUTEX

ECQ-E2106KF产品属性

  • 类型

    描述

  • 型号

    ECQ-E2106KF

  • 功能描述

    薄膜电容器 250DC 10.0uF 10% L/S =5mm

  • RoHS

  • 制造商

    Cornell Dubilier

  • 电介质

    Polyester

  • 电容

    0.047 uF

  • 容差

    10 %

  • 电压额定值

    100 V

  • 系列

    225P

  • 工作温度范围

    - 55 C to + 85 C

  • 端接类型

    Radial

  • 引线间隔

    9.5 mm

更新时间:2026-3-18 15:01:00
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23+
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2022+
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24+
con
10000
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一级代理-主营优势-实惠价格-不悔选择
2022+
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24+
con
35960
查现货到京北通宇商城
Panasonic Electronic Component
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全新、原装
PANASONIC
25+
电容器
2926
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