N.Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

DESCRIPTION Depletion type field-effect transistor in a plastic SOT143 microminiature package with interconnected source and substrate. FEATURES • Protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. APPLICATIONS • RF applications such a

Silicon N Channel MOSFET Tetrode (For input stages in UHF TV tuners High transconductance Low noise figure)

Silicon N Channel MOSFET Tetrode ● For input stages in UHF TV tuners ● High transconductance ● Low noise figure

N.Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

DESCRIPTION Depletion type field-effect transistor in a plastic SOT143 microminiature package with interconnected source and substrate. FEATURES • Protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. APPLICATIONS • RF applications such a

N.Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

DESCRIPTION Depletion type field-effect transistor in a plastic SOT143 microminiature package with interconnected source and substrate. FEATURES • Protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. APPLICATIONS • RF applications such a

High-Speed, Micropower, Low-Voltage, SOT23, Rail-to-Rail I/O Comparators

General Description The MAX987/MAX988/MAX991/MAX992/MAX995/MAX996 single/dual/quad micropower comparators feature low-voltage operation and rail-to-rail inputs and outputs. Their operating voltage ranges from +2.5V to +5.5V, making them ideal for both 3V and 5V systems. These comparators also ope

2MHz, Operational Transconductance Amplifier (OTA)

2MHz, Operational Transconductance Amplifier (OTA)

Operational Transconductance Amplifier

Linear Integrated Circuit Operational Transconductance Amplifier