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ECD0904

MOSFET

E-CMOS

飞虹高科

900 MHz GaAs TWO STAGE DRIVER AMP INTEGRATED CIRCUIT

The MRFIC Line 900 MHz GaAs Two-Stage Driver Amplifier The MRFIC0904 is an integrated driver amplifier designed for class A/B operation in the 800 MHz to 1 GHz frequency range. The design utilizes Motorola’s Advanced GaAs FET process to yield superior performance and efficiency in a cost effecti

MOTOROLA

摩托罗拉

L,S BAND POWER GaAs FET

文件:117.54 Kbytes Page:3 Pages

MITSUBISHI

三菱电机

L,S BAND POWER GaAs FET?

文件:632.62 Kbytes Page:3 Pages

MITSUBISHI

三菱电机

L,S BAND POWER GaAs FET?

文件:632.62 Kbytes Page:3 Pages

MITSUBISHI

三菱电机

L,S BAND POWER GaAs FET

文件:117.54 Kbytes Page:3 Pages

MITSUBISHI

三菱电机

ECD0904产品属性

  • 类型

    描述

  • Configuration:

    Single

  • MOSFET TyEC:

    N

  • V DS(V):

    100

  • V GS(V):

    ±20

  • V th (V):

    1.2/1.6/2.5

  • R DS(ON)(mΩ) max. at V GS =10V:

    45/55

  • V GS =4.5V:

    50/60

  • Ciss(pF):

    2860

  • Coss (pF):

    120

  • Crss(pF):

    70

  • Qg (nC)=10V:

    46

  • Qgs(nC):

    4.5

  • Qgd(nC):

    12

  • Rg W:

    1.2

  • I D(A) Tc=25 ℃:

    25

  • I D(A) Tc=100 ℃:

    15

  • EC(W)Tc=25 ℃:

    73.5

  • ESDDiode:

    X

  • SchokktyDiode:

    X

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