L,S BAND POWER GaAs FET

文件：117.54 Kbytes Page：3 Pages

L,S BAND POWER GaAs FET?

文件：632.62 Kbytes Page：3 Pages

L,S BAND POWER GaAs FET

L,S BAND POWER GaAs FET

High-power GaAs FET (small signal gain stage) L & S BAND / 0.6W

L,S BAND POWER GaAs FET

文件：117.54 Kbytes Page：3 Pages

L,S BAND POWER GaAs FET?

文件：632.62 Kbytes Page：3 Pages

L,S BAND POWER GaAs FET

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High-power GaAs FET (small signal gain stage)

文件：158.27 Kbytes Page：4 Pages

L,S BAND POWER GaAs FET

文件：372.1 Kbytes Page：4 Pages

High-power GaAs FET (small signal gain stage)

文件：158.27 Kbytes Page：4 Pages

MOSFET DUAL N-CHANNEL ENHANCEMENT MODE

DESCRIPTION The AM0904 is available in DFN8(5x6) package. FEATURES  Channel 1 30V/48A, R DS(ON) = 7m 7mΩ (max.) @ V GS = 10V R DS(ON) = 10m 10mΩ (max.) @ V GS = 4.5V  Channel 2 30V/50A, R DS(ON) = 4m 4mΩ (max.) @ V GS =10V R DS(ON) = 5.9m 5.9mΩ (max.) @ V GS =4.5V  100 UIS + R

DIP SWITCH ASSEMBLY ADP/PA SERIES

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N-Channel MOSFET uses advanced trench technology

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Low On-resistance, Simple Drive Requirement

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Low On-resistance, Simple Drive Requirement, Fast Switching Characteristic

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