High-power GaAs FET (small signal gain stage) L & S BAND / 0.6W

DESCRIPTION\nThe MGF0904A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers.FEATURES\n• High output power\n   Po=28.0dBm(TYP.) @f=1.65GHz,Pin=15dBm\n• High power gain\n   Gp=13.0dB(TYP.) @f=1.65GHz,Pin=15dBm\n• High power added efficiency\n   P.A.E =40%(TYP.) • High output power\n   Po=28.0dBm(TYP.) @f=1.65GHz,Pin=15dBm\n• High power gain\n   Gp=13.0dB(TYP.) @f=1.65GHz,Pin=15dBm\n• High power added efficiency\n   P.A.E =40%(TYP.) @f=1.65GHz,Pin=15dBmAPPLICATION\n• For UHF Band power amplifiers ;

L,S BAND POWER GaAs FET

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L,S BAND POWER GaAs FET?

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L,S BAND POWER GaAs FET

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High-power GaAs FET (small signal gain stage)

文件：158.27 Kbytes Page：4 Pages

L,S BAND POWER GaAs FET

L,S BAND POWER GaAs FET

文件：372.1 Kbytes Page：4 Pages

High-power GaAs FET (small signal gain stage)

文件：158.27 Kbytes Page：4 Pages

L,S BAND POWER GaAs FET?

文件：632.62 Kbytes Page：3 Pages

L,S BAND POWER GaAs FET

文件：117.54 Kbytes Page：3 Pages

900 MHz GaAs TWO STAGE DRIVER AMP INTEGRATED CIRCUIT

The MRFIC Line 900 MHz GaAs Two-Stage Driver Amplifier The MRFIC0904 is an integrated driver amplifier designed for class A/B operation in the 800 MHz to 1 GHz frequency range. The design utilizes Motorola’s Advanced GaAs FET process to yield superior performance and efficiency in a cost effecti