L,S BAND POWER GaAs FET

文件：372.1 Kbytes Page：4 Pages

High-power GaAs FET (small signal gain stage)

文件：158.27 Kbytes Page：4 Pages

L,S BAND POWER GaAs FET

文件：117.54 Kbytes Page：3 Pages

L,S BAND POWER GaAs FET?

文件：632.62 Kbytes Page：3 Pages

L,S BAND POWER GaAs FET

High-power GaAs FET (small signal gain stage) L & S BAND / 0.6W

L,S BAND POWER GaAs FET

文件：372.1 Kbytes Page：4 Pages

High-power GaAs FET (small signal gain stage)

文件：158.27 Kbytes Page：4 Pages

MOSFET DUAL N-CHANNEL ENHANCEMENT MODE

DESCRIPTION The AM0904 is available in DFN8(5x6) package. FEATURES  Channel 1 30V/48A, R DS(ON) = 7m 7mΩ (max.) @ V GS = 10V R DS(ON) = 10m 10mΩ (max.) @ V GS = 4.5V  Channel 2 30V/50A, R DS(ON) = 4m 4mΩ (max.) @ V GS =10V R DS(ON) = 5.9m 5.9mΩ (max.) @ V GS =4.5V  100 UIS + R

DIP SWITCH ASSEMBLY ADP/PA SERIES

文件：301.27 Kbytes Page：2 Pages

N-Channel MOSFET uses advanced trench technology

文件：863.69 Kbytes Page：5 Pages

Low On-resistance, Simple Drive Requirement

文件：112.58 Kbytes Page：4 Pages

Low On-resistance, Simple Drive Requirement, Fast Switching Characteristic

文件：63.11 Kbytes Page：4 Pages