Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES ■ 30V, 7A, RDS(ON) = 26mΩ @VGS = 10V. RDS(ON) = 38mΩ @VGS = 4.5V. ■ -30V, -6A, RDS(ON) = 38mΩ @VGS = -10V. RDS(ON) = 57mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Le

Dual Enhancement Mode Field Effect Transistor

N-channel: VOLTAGE 30 Volts CURRENT 7 Ampere P-channel: VOLTAGE 30 Volts CURRENT 6 Ampere FEATURE ​​​​​​​* Small flat package. (SO-8 ) * Super high dense cell design for extremely low RDS(ON). * Lead free product is acquired. * High power and current handing capability. APPLICATION * Servo

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