E-Series Automotive 4th Generation 1200 V, 20 A Silicon Carbide Schottky Diode

Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to m

封装/外壳：TO-220-2 包装：管件 描述：E SERIES, 20 AMP, 1200V G4 SCHOT 分立半导体产品 二极管 - 整流器 - 单

1200 V Discrete Silicon Carbide Schottky Diodes

丝印代码：E4D20120；Silicon Carbide Schottky Diode E-Series Automotive

文件：726.94 Kbytes Page：6 Pages

丝印代码：E4D20120；Silicon Carbide Schottky Diode E-Series Automotive

文件：735.05 Kbytes Page：6 Pages

丝印代码：E4D20120；Silicon Carbide Schottky Diode Silicon Carbide Schottky Diode

文件：2.84704 Mbytes Page：6 Pages

CREE Silicon Carbide MOSFET Evaluation Kit

Description: This Evaluation kit is meant to demonstrate the high performance of all CREE 1200V MOSFETs and CREE Schottky diodes (SBD) in standard TO-247 package. The kit includes two Cree 80mOhm, 1200V CREE MOSFETs and two 1200V 20A schottky diodes; a half bridge configured evaluation board that

Silicon Carbide Schottky Diode

Z-REC™ RECTIFIERS and ZERO-RECOVERY® RECTIFIERS SILICON CARBIDE Z-FET™ MOSFET

丝印代码：C4D20120；Silicon Carbide Schottky Diode Z-Rec Rectifier

文件：679.24 Kbytes Page：6 Pages