CREE Silicon Carbide MOSFET Evaluation Kit

Description: This Evaluation kit is meant to demonstrate the high performance of all CREE 1200V MOSFETs and CREE Schottky diodes (SBD) in standard TO-247 package. The kit includes two Cree 80mOhm, 1200V CREE MOSFETs and two 1200V 20A schottky diodes; a half bridge configured evaluation board that

Silicon Carbide Schottky Diode

Z-REC™ RECTIFIERS and ZERO-RECOVERY® RECTIFIERS SILICON CARBIDE Z-FET™ MOSFET

Silicon Carbide Schottky Diode

FEATURES · 1.2kV Schottky Rectifier · Zero Reverse Recovery Current · High-Frequency Operation APPLICATIONS · Boost Diodes in PFC or DC/DC Stages · AC/DC Converters · Switch Mode Power Supply (SMPS) · Free Wheeling Diodes in Inverters Stages

丝印代码：C4D20120；Silicon Carbide Schottky Diode Z-Rec® Rectifier

Features • 1.2-KVolt Schottky Rectifier • Zero Reverse Recovery Current • High-Frequency Operation • Temperature-Independent Switching Behavior • Positive Temperature Coefficient on VF Benefits • Replace Bipolar with Unipolar Rectifiers • Essentially No Switching Losses • Higher Efficienc

碳化硅肖特基二极管

低电容，高频开关，高温环境工作\n更高电流下经过优化的开关行为\n具有低反向恢复电荷的整流稳健快速体二极管\n出色的热性能\n更高的雪崩耐量\n适应多种标准驱动程序\n3/4/7 引脚封装;

Schottky Rectifier

1200 V Discrete Silicon Carbide Schottky Diodes

封装/外壳：TO-247-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE ARRAY SCHOTTKY 1200V TO247 分立半导体产品 二极管 - 整流器 - 阵列

丝印代码：C4D20120；Silicon Carbide Schottky Diode Z-Rec Rectifier

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丝印代码：E4D20120；Silicon Carbide Schottky Diode E-Series Automotive

文件：735.05 Kbytes Page：6 Pages

丝印代码：E4D20120；Silicon Carbide Schottky Diode Silicon Carbide Schottky Diode

文件：2.84704 Mbytes Page：6 Pages