Silicon Carbide Schottky Diode E-Series Automotive

Features • 4th Generation SiC Merged PIN Schottky Technology • Zero Reverse Recovery Current • High-Frequency Operation • Temperature-Independent Switching Behavior • AEC-Q101 Qualified and PPAP Capable • Humidity Resistant Benefits • Replace Bipolar with Unipolar Rectifiers • Essentially

封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：1200 V 20 A SCHOTTKY DIODE (SING 分立半导体产品 二极管 - 整流器 - 单

1200 V Discrete Silicon Carbide Schottky Diodes

丝印代码：E4D20120；Silicon Carbide Schottky Diode Silicon Carbide Schottky Diode

文件：2.84704 Mbytes Page：6 Pages

丝印代码：E4D20120；Silicon Carbide Schottky Diode E-Series Automotive

文件：735.05 Kbytes Page：6 Pages

CREE Silicon Carbide MOSFET Evaluation Kit

Description: This Evaluation kit is meant to demonstrate the high performance of all CREE 1200V MOSFETs and CREE Schottky diodes (SBD) in standard TO-247 package. The kit includes two Cree 80mOhm, 1200V CREE MOSFETs and two 1200V 20A schottky diodes; a half bridge configured evaluation board that

Silicon Carbide Schottky Diode

Z-REC™ RECTIFIERS and ZERO-RECOVERY® RECTIFIERS SILICON CARBIDE Z-FET™ MOSFET

丝印代码：C4D20120；Silicon Carbide Schottky Diode Z-Rec Rectifier

文件：679.24 Kbytes Page：6 Pages