丝印代码：E4D20120；Silicon Carbide Schottky Diode E-Series Automotive

Features • 4th Generation SiC Merged PIN Schottky Technology • Zero Reverse Recovery Current • High-Frequency Operation • Temperature-Independent Switching Behavior • AEC-Q101 Qualified and PPAP Capable • Humidity Resistant Benefits • Replace Bipolar with Unipolar Rectifiers • Essentially

丝印代码：E4D20120；Silicon Carbide Schottky Diode E-Series Automotive

文件：726.94 Kbytes Page：6 Pages

丝印代码：E4D20120；Silicon Carbide Schottky Diode E-Series Automotive

文件：735.05 Kbytes Page：6 Pages

丝印代码：E4D20120；Silicon Carbide Schottky Diode Silicon Carbide Schottky Diode

文件：2.84704 Mbytes Page：6 Pages

E-Series Automotive 4th Generation 1200 V, 20 A Silicon Carbide Schottky Diode

Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to m

Silicon Carbide Schottky Diode E-Series Automotive

Features • 4th Generation SiC Merged PIN Schottky Technology • Zero Reverse Recovery Current • High-Frequency Operation • Temperature-Independent Switching Behavior • AEC-Q101 Qualified and PPAP Capable • Humidity Resistant Benefits • Replace Bipolar with Unipolar Rectifiers • Essentially

1200 V Discrete Silicon Carbide Schottky Diodes

1200 V Discrete Silicon Carbide Schottky Diodes

封装/外壳：TO-247-3 包装：管件 描述：1200 V 20 A SCHOTTKY DIODE (DUAL 分立半导体产品 二极管 - 整流器 - 单

1200 V Discrete Silicon Carbide Schottky Diodes

封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：1200 V 20 A SCHOTTKY DIODE (SING 分立半导体产品 二极管 - 整流器 - 单

Industrial Pushbutton Switch

文件：374.32 Kbytes Page：6 Pages