N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE ■ HIGH CURRENT POWER MODULE ■ AVALANCHE RUGGED TECHNOLOGY (SEE IRFP450 FOR RATING) ■ VERY LARGE SOA - LARGE PEAK POWER CAPABILITY ■ EASY TO MOUNT ■ SAME CURRENT CAPABILITY FOR THE TWO SOURCE TERMINALS ■ EXTREMELY LOW Rth JUNCT

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 19A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.19Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 36A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 170mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

PolarHV HiPerFET Power MOSFET

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PolarHV HiPerFET Power MOSFET

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