位置:首页 > IC中文资料 > E30N50E

型号 功能描述 生产厂家 企业 LOGO 操作

TMOS POWER FET 30 AMPERES 500 VOLTS RDS(on) = 0.150 OHM

ISOTOP TMOS E-FET Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new energy design also offers a drain–to–source diode with fast recovery time. Designed for hig

MOTOROLA

摩托罗拉

TMOS POWER FET 30 AMPERES 500 VOLTS RDS(on) = 0.15 OHM

TMOS E-FET Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with fast recovery time. Designed for hi

MOTOROLA

摩托罗拉

TMOS POWER FET 30 AMPERES 500 VOLTS RDS(on) = 0.15 OHM

TMOS E-FET Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with fast recovery time. Designed for hi

MOTOROLA

摩托罗拉

HiPerFET Power MOSFETs ISOPLUS247

文件:92.65 Kbytes Page:4 Pages

IXYS

艾赛斯

HiPerFET Power MOSFETs ISOPLUS247

文件:92.65 Kbytes Page:4 Pages

IXYS

艾赛斯

更新时间:2026-7-22 23:00:01
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
onsemi(安森美)
25+
-
20948
样件支持,可原厂排单订货!
onsemi(安森美)
25+
-
21000
正规渠道,免费送样。支持账期,BOM一站式配齐
MOTOROLA
24+
TO-3P
16800
绝对原装进口现货 假一赔十 价格优势!?
ON(安森美)
26+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
ON
24+
TO-264
6000
进口原装正品假一赔十,货期7-10天
ON
26+
TO-264
6893
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订
ON进口原装
25+23+
TO-3P
55314
绝对原装正品现货,全新深圳原装进口现货
ON进口原装
26+
TO-3P
50000
芯为深仓现货
MOT
25+
1
公司优势库存 热卖中!
MOT
05+
TO-3PL
500
原装进口

E30N50E数据表相关新闻