Rectangular LEDs

Rectangular LEDs

Isolated, Single Output Ultra-Miniature, 2W SIP DC/DC Converters

Key Features: • 2W Output Power • Ultra-Miniature SIP Case • 1,000 VDC Isolation • >2 MHour MTBF • 18 Standard Models • Industry Standard Pin-Out

High Isolation, 2W Ultra-Miniature, SIP DC/DC Converters

High Isolation, 2W Ultra-Miniature, SIP DC/DC Converters Key Features: •2W Output Power •Ultra-Miniature SIP Case •3,000 VDC Isolation •>2 MHour MTBF •18 Standard Models •Industry Standard Pin-Out

Intel Pentium Dual-Core Desktop Processor

文件：1.4306 Mbytes Page：104 Pages

包装：散装 描述：TERM BLOCK PLUG 22POS STR 3.5MM 连接器，互连器件 针座、插头和插座

固态电容

固态电容

固态电容

E200I SERIES

文件：172.42 Kbytes Page：2 Pages

SOT-416/SC-90 PACKAGE COMMON CATHODE DUAL SWITCHING DIODE SURFACE MOUNT

Common Cathode Dual Switching Diode Surface Mount This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SOT–416/SC–90 package which is designed for low power surface mount applications, where board spac

丝印代码：N9*；COMMON CATHODE SILICON DUAL SWITCHING DIODE

This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SOT−416/SC−90 package which is designed for low power surface mount applications, where board space is at a premium. Features • Fast trr • Low CD

SOT-416/SC-90 PACKAGE COMMON ANODE DUAL SWITCHING DIODE SURFACE MOUNT

This Common Anode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SOT–416/SC–90 package which is designed for low power surface mount applications, where board space is at a premium. • Fast trr • Low CD • Available

Field Effect Transistor Dual Gate N-Channel MOSFET

Field Effect Transistor Dual Gate N–Channel MOSFET

Transistor array to drive the small motor

Silicon PNP epitaxial planar type (3 elements) Silicon NPN epitaxial planar type (3 elements) For motor drives ■ Features • Small and lightweight • Low power consumption (low VCE(sat) transistor used) • Low voltage drive • Transistors with built-in resistor with 6 elements incorporated