40V PNP LOW VCESAT TRANSISTOR IN POWERDI3333-8

Features BVCEO > -40V Small Form Factor Thermally Efficient Package. Enables Higher Density End Products IC = -3A High Continuous Current ICM = -6A Peak Pulse Current Low Saturation Voltage VCE(sat)

40V PNP LOW VCESAT TRANSISTOR IN POWERDI3333-8

Features BVCEO > -40V Small Form Factor Thermally Efficient Package. Enables Higher Density End Products IC = -3A High Continuous Current ICM = -6A Peak Pulse Current Low Saturation Voltage VCE(sat)

封装/外壳：8-PowerVDFN 包装：卷带（TR） 描述：TRANS PNP 40V 3A POWERDI3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：8-PowerVDFN 包装：卷带（TR） 描述：TRANS PNP 40V 3A POWERDI3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

40V, SOT23F, PNP medium power transistor

Description This low voltage PNP transistor has been designed for applications requiring high gain and very low saturation voltage. The SOT23F package is pin compatible with the industry standard SOT23 footprint but offers lower profile and higher dissipation for applications where power density

40V, SOT23F, PNP medium power transistor

Description This low voltage PNP transistor has been designed for applications requiring high gain and very low saturation voltage. The SOT23F package is pin compatible with the industry standard SOT23 footprint but offers lower profile and higher dissipation for applications where power density

40V, SOT23F, PNP medium power transistor

Description This low voltage PNP transistor has been designed for applications requiring high gain and very low saturation voltage. The SOT23F package is pin compatible with the industry standard SOT23 footprint but offers lower profile and higher dissipation for applications where power density

40V, SOT23F, PNP medium power transistor

Description This low voltage PNP transistor has been designed for applications requiring high gain and very low saturation voltage. The SOT23F package is pin compatible with the industry standard SOT23 footprint but offers lower profile and higher dissipation for applications where power density