LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR

Features • Epitaxial Planar Die Construction • Complementary NPN Type Available (DXT651) • Ideally Suited for Automated Assembly Processes • Ideal for Medium Power Switching or Amplification Applications • Lead Free By Design/RoHS Compliant (Note 1) • Green Device (Note 2)

PNP, 60V, 3A, SOT89

LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR

Features • Epitaxial Planar Die Construction • Complementary NPN Type Available (DXT651) • Ideally Suited for Automated Assembly Processes • Ideal for Medium Power Switching or Amplification Applications • Lead Free By Design/RoHS Compliant (Note 1) • Green Device (Note 2)

60V PNP LOW SATURATION POWER TRANSISTOR

Description This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of automotive applications. Features • BVCEO > -60V • IC = -3A High Continuous Collector Current • ICM up to -6A Peak Pulse Current • 2W Power Dissipation • Complementary PNP Type: DXT651Q • T

60V PNP LOW SATURATION POWER TRANSISTOR

Description This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of automotive applications. Features • BVCEO > -60V • IC = -3A High Continuous Collector Current • ICM up to -6A Peak Pulse Current • 2W Power Dissipation • Complementary PNP Type: DXT651Q • T

LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR

文件：170.82 Kbytes Page：4 Pages

封装/外壳：TO-243AA 包装：卷带（TR） 描述：TRANS PNP 60V 3A SOT89-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

transistor-bjt-master-table

封装/外壳：TO-243AA 包装：卷带（TR） 描述：TRANS PNP 60V 3A SOT89-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Directional Couplers

文件：291.44 Kbytes Page：5 Pages

QUADRATURE HYBRID

文件：154.02 Kbytes Page：1 Pages

Octave Band and Broadband

文件：291.44 Kbytes Page：5 Pages

QUADRATURE HYBRID

文件：154 Kbytes Page：1 Pages

WIRE & CABLE TERMINATION

文件：3.92843 Mbytes Page：50 Pages