DTA123EE晶体管资料
DTA123EE别名:DTA123EE三极管、DTA123EE晶体管、DTA123EE晶体三极管
DTA123EE生产厂家:
DTA123EE制作材料:Si-P+R
DTA123EE性质:表面帖装型 (SMD)
DTA123EE封装形式:贴片封装
DTA123EE极限工作电压:50V
DTA123EE最大电流允许值:0.1A
DTA123EE最大工作频率:<1MHZ或未知
DTA123EE引脚数:3
DTA123EE最大耗散功率:0.3W
DTA123EE放大倍数:
DTA123EE图片代号:H-15
DTA123EEvtest:50
DTA123EEhtest:999900
- DTA123EEatest:0.1
DTA123EEwtest:0.3
DTA123EE代换 DTA123EE用什么型号代替:
DTA123EE价格
参考价格:¥0.2319
型号:DTA123EETL 品牌:Rohm 备注:这里有DTA123EE多少钱,2026年最近7天走势,今日出价,今日竞价,DTA123EE批发/采购报价,DTA123EE行情走势销售排行榜,DTA123EE报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
DTA123EE | 丝印代码:12;Digital transistors (built-in resistors) Features 1) Built-In Biasing Resistors, R1 = R2 = 2.2kΩ 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) Only the on/off conditions need to be set for operation, making the circuit design | ROHM 罗姆 | ||
DTA123EE | 丝印代码:12;Digital transistors (built-in resistors) Features 1) Built-In Biasing Resistors, R1 = R2 = 2.2kΩ 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) Only the on/off conditions need to be set for operation, making the circuit design | ROHM 罗姆 | ||
DTA123EE | Bias Resistor Transistor PNP Silicon Bias Resistor Transistor PNP Silicon P/b Lead(Pb)-Free | WEITRON | ||
DTA123EE | 丝印代码:12;-100mA / -50V Digital transistors (with built-in resistors) Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors. (see equivalent circuit) 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also | ROHM 罗姆 | ||
DTA123EE | 丝印代码:12;PNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors) Features 1) Built-In Biasing Resistors, R1 = R2 = 2.2kΩ 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) Only the on/off conditions need to be set for operation, making the circuit design | ROHM 罗姆 | ||
DTA123EE | 丝印代码:12;PNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors) Features 1) Built-In Biasing Resistors, R1 = R2 = 2.2kΩ 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) Only the on/off conditions need to be set for operation, making the circuit design | ROHM 罗姆 | ||
DTA123EE | PNP Bipolar Digital Transistor (BRT) This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT el • Simplifies Circuit Design\n• Reduces Board Space\n• Reduces Component Count\n• NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable\n• These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant; | ONSEMI 安森美半导体 | ||
DTA123EE | Digital Transistors (BRT) 文件:176.35 Kbytes Page:11 Pages | ONSEMI 安森美半导体 | ||
DTA123EE | PNP Transistors with Monolithic Bias Resistor Network 文件:103.89 Kbytes Page:11 Pages | ONSEMI 安森美半导体 | ||
DTA123EE | Digital Transistors (BRT) R1 = 2.2 k, R2 = 2.2 k 文件:133.25 Kbytes Page:10 Pages | ONSEMI 安森美半导体 | ||
DTA123EE | 丝印代码:12;PNP -100mA -50V Digital Transistor 文件:1.40813 Mbytes Page:12 Pages | ROHM 罗姆 | ||
-100mA / -50V Digital transistors (with built-in resistors) Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors. (see equivalent circuit) 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also | ROHM 罗姆 | |||
丝印代码:12;PNP -100mA -50V Digital Transistor (Bias Resistor Built-in Transistor) Features 1) Built-In Biasing Resistors, R1 = R2 = 2.2kΩ 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) Only the on/off conditions need to be set for operation, making the circuit design easy. | ROHM 罗姆 | |||
PNP, SOT-416, R1=R2 车载数字晶体管(内置偏置电阻的晶体管) DTA123EE3HZG是一款车规级高可靠性数字晶体管。 • Built-In Biasing Resistors, R1 = R2 = 2.2kΩ\n• Built-in bias resistors enable the configuration of\nan inverter circuit without connecting external\ninput resistors (see inner circuit) .\n• Only the on/off conditions need to be set for operation, making the circuit design easy.\n• Complementary NP; | ROHM 罗姆 | |||
PNP -100mA -50V 数字晶体管(内置电阻器) DTA123EEB是一款电阻内置型晶体管。内置偏置电阻,因此输入侧无需外置电阻器也可构成逆变电路。 | ROHM 罗姆 | |||
Bias Resistor Transistor Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monol | ONSEMI 安森美半导体 | |||
PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monol | ONSEMI 安森美半导体 | |||
PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monol | ONSEMI 安森美半导体 | |||
封装/外壳:SC-89,SOT-490 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:PNP -100MA -50V DIGITAL TRANSIST 分立半导体产品 晶体管 - 双极(BJT)- 单,预偏置 | ROHM 罗姆 | |||
丝印代码:12;PNP -100mA -50V Digital Transistor (Bias Resistor Built-in Transistor) 文件:1.01892 Mbytes Page:8 Pages | ROHM 罗姆 | |||
封装/外壳:SC-75,SOT-416 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:PNP DIGITAL TRANSISTOR (CORRESPO 分立半导体产品 晶体管 - 双极(BJT)- 单,预偏置 | ROHM 罗姆 | |||
Bias Resistor Transistors 文件:108.32 Kbytes Page:13 Pages | ONSEMI 安森美半导体 | |||
Bias Resistor Transistors 文件:108.32 Kbytes Page:13 Pages | ONSEMI 安森美半导体 | |||
Digital Transistors (BRT) 文件:176.35 Kbytes Page:11 Pages | ONSEMI 安森美半导体 | |||
Digital Transistors (BRT) R1 = 2.2 k, R2 = 2.2 k 文件:133.25 Kbytes Page:10 Pages | ONSEMI 安森美半导体 | |||
PNP Transistors with Monolithic Bias Resistor Network 文件:103.89 Kbytes Page:11 Pages | ONSEMI 安森美半导体 | |||
Silicon NPN Transistor General Purpose Audio Amplifier, Switch Silicon NPN Transistor General Purpose Audio Amplifier, Switch | NTE | |||
Dual Retriggerable Monostable Multivibrator 文件:198.33 Kbytes Page:6 Pages | NSC 国半 | |||
3-Amp, 5-Volt Positive Regulator 文件:203.43 Kbytes Page:8 Pages | NSC 国半 | |||
3-Amp, 5-Volt Positive Regulator 文件:203.43 Kbytes Page:8 Pages | NSC 国半 | |||
3-Amp, 5-Volt Positive Regulator 文件:203.43 Kbytes Page:8 Pages | NSC 国半 |
DTA123EE产品属性
- 类型
描述
- Pb-free:
Pb
- Halide free:
H
- Status:
Active
- Polarity:
PNP
- IC Continuous (A):
0.1
- V(BR)CEO Min (V):
50
- hFE Min:
8
- R1 (kΩ):
2.2
- R2 (kΩ):
2.2
- R1/R2 Typ:
1
- Vi(off) Max (V):
0.5
- Vi(on) Min (V):
2
- Package Type:
SC-75-3
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi |
25+ |
SC-75,SOT-416 |
21000 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
ROHM/罗姆 |
25+ |
原装 |
32000 |
ROHM/罗姆全新特价DTA123EE即刻询购立享优惠#长期有货 |
|||
ROHM |
24+ |
SOT523 |
20000 |
全新原厂原装,进口正品现货,正规渠道可含税!! |
|||
ROHM |
23+ |
SOT0523 |
20000 |
||||
ROHM |
25+ |
SOT0523 |
20000 |
原装 |
|||
ROHM |
23+ |
SOT0523 |
3000 |
正规渠道,只有原装! |
|||
ROHM |
21+ |
EMT3 |
100 |
只做原装鄙视假货15118075546 |
|||
ROHM |
23+ |
NA |
2799 |
专做原装正品,假一罚百! |
|||
ROHM |
19+ |
SOT523 |
20000 |
3000 |
|||
ROHM/罗姆 |
2450+ |
SOT523 |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
DTA123EE芯片相关品牌
DTA123EE规格书下载地址
DTA123EE参数引脚图相关
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- DTA124T(A,F,L,S,V)
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- DTA124G(A,F,L,S,V)
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- DTA124(A,F,L,S,V)
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- DTA123YU(A)
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- DTA123Y(A,F,L,S,V)
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- DTA115U(A,F,L,S,V)
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- DTA115TC,TK(A)
- DTA115T(A,F,L,S,V)
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- DTA115GU(A)
- DTA115GE
- DTA115GC,GK(A)
- DTA115G(A,F,L,S,V)
- DTA115G
- DTA115EU(A)
- DTA115EE
- DTA115EC,EK(A)
- DTA115E(A,F,L,S,V)
- DTA115E
- DTA115
- DTA114YE
- DTA114YC,YK(A)
- DTA114Y
- DTA114W
- DTA114T
- DTA114G
- DTA114E
- DTA113Z
- DTA113T
- DTA113
- DTA08E
- DTA-080
- DTA08
- DTA-070
- DTA05E
- DTA05C
DTA123EE数据表相关新闻
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2021-9-17DT74FCT162244ATPF-缓冲器/驱动器
描述: 该FCT162244T16位缓冲器/线路驱动器,是用于总线接口或信号缓冲适用于需要高速和低功耗。这些通过引脚器件有一个组织流程,简化和收缩包装电路板布局。所有输入的设计与改进的噪声容限的滞后。三态控制允许独立的4位,8位或联合16位运作。这些部分在哪里更换插头54/74ABT16244更高的速度,更低的噪音和低功耗水平的需要。该FCT162244T有平衡输出电流水平和电流限制电阻。这些具有低接地反弹,最小冲和控制输出下降时间,从而降低了外部串联电阻器的需要而终止还提供了对小于200pF负载非常高的速度运行。 特点: •
2013-3-5
DdatasheetPDF页码索引
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