100mA/-50V Digital transistors(with built-in resistors)

-100mA/-50V Digital transistors(with built-in resistors) Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors. (See Equivalent circuit) 2) The bias resistors consist of thin-film resistors with complete isolation to allo

Digital transistor(with built-in resistors)

罗姆开发了数字晶体管的标准产品。 •标准的数字晶体管;

丝印代码：32；PNP -100mA -50V Digital Transistor

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封装/外壳：SOT-723 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PREBIAS PNP 150MW VMT3 分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置

RADIATION HARDENED SEGR-RESISTANT N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Features • Harris FSC260R die • total dose: 100 kRAD(Si) within pre-radiation parameter limits • dose rate: 3 x 109RAD(Si)/sec @ 80BVDSS typical • dose rate: 2 x 1012RAD(Si)/sec @ ID £IDM typical • neutron: 1013 neutrons/cm2 within pre-radiation parameter limits • photocurrent: 17 nA/RAD(Si)

RADIATION HARDENED SEGR-RESISTANT N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Features • Harris FSC260R die • total dose: 100 kRAD(Si) within pre-radiation parameter limits • dose rate: 3 x 109RAD(Si)/sec @ 80BVDSS typical • dose rate: 2 x 1012RAD(Si)/sec @ ID £IDM typical • neutron: 1013 neutrons/cm2 within pre-radiation parameter limits • photocurrent: 17 nA/RAD(Si)

SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

VBR: 6.8 - 440 Volts PPK: 400 Watts FEATURES : * 400W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min.) * Typical IR less then 1mA above 10V

SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

VBR : 6.8 - 440 Volts PPK : 400 Watts FEATURES : * 400W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min.) * Typical IR less then 1mA above 10V * Pb / RoHS Free

Silicon planar type

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