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MX043J中文资料

厂家型号

MX043J

文件大小

183.1Kbytes

页面数量

4

功能描述

RADIATION HARDENED SEGR-RESISTANT N-CHANNEL ENHANCEMENT MODE POWER MOSFET

数据手册

下载地址一下载地址二到原厂下载

生产厂商

MICROSEMI

MX043J数据手册规格书PDF详情

Features

• Harris FSC260R die

• total dose: 100 kRAD(Si) within pre-radiation parameter limits

• dose rate: 3 x 109RAD(Si)/sec @ 80BVDSS typical

• dose rate: 2 x 1012RAD(Si)/sec @ ID £IDM typical

• neutron: 1013 neutrons/cm2 within pre-radiation parameter limits

• photocurrent: 17 nA/RAD(Si)/sec typical

• rated Safe Operating Area Curve for Single event Effects

• rugged polysilicon gate cell structure with ultrafast body diode

• low inductance surface mount power package available with “J-leads” (MX043J) or “gullwing-leads” (MX043G)

• very low thermal resistance

• reverse polarity available upon request add suffix “R”st

MX043J产品属性

  • 类型

    描述

  • 型号

    MX043J

  • 制造商

    MICROSEMI

  • 制造商全称

    Microsemi Corporation

  • 功能描述

    RADIATION HARDENED SEGR-RESISTANT N-CHANNEL ENHANCEMENT MODE POWER MOSFET