N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • High Cell Density DMOS Technology • Low On-State Resistance • High Power and Current Capability • Fast Switching Speed • High Transient Tolerance

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Integrated Soldier Power and Data Management System (ISPDS) with USB.3.0 and 1G LAN Capabilities

FEATURES DESCRIPTION The advancement of technologies in the modern warfare has allowed the design of increasingly versatile tools in order to perform effectively and coherently in the battlefield. The modern infantry soldier, fully equipped with advanced weapon and communication systems, has

Replace “XX” with 01 through 12 for number of poles 11/16 (.688) pitch

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Heavy-Duty Hydra-Lift Karriers

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Celeron M Processor on 65 nm Process

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Detectable Buried Barricade Tapes 400 Series

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