LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR

Description This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Features • BVCEO > -60V • IC = -1A Continuous Collector Current • ICM = -2A Peak Pulse Current • Epitaxial Planar Die Construction • Ideal for Medium Power Amplifica

60V LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR

LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR

Description This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Features • BVCEO > -60V • IC = -1A Continuous Collector Current • ICM = -2A Peak Pulse Current • Epitaxial Planar Die Construction • Ideal for Medium Power Amplifica

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR） 描述：TRANS PNP 60V 1A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

RECTIFIERS

DESCRIPTION These series of high current rectifiers offers opportunity for size and weight reduction in high power supplies. FEATURES • Rating: 12A • Controlled Avalanche • Miniature Package • Surge Rating: 200A

20 (7/28) AWG Tinned Copper

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2.5 Amp Gate Drive Optocoupler with Integrated (VCE) Desaturation Detection and Fault Status Feedback

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2.5-Amp Gate Drive Optocoupler with Integrated (VCE) Desaturation Detection and Fault Status Feedback

文件：2.20399 Mbytes Page：36 Pages