15V LOW VCE(sat) NPN SURFACE MOUNT TRANSISTOR

Features • BVCEO > 15V • IC = 500mA High Collector Current • ICM = 1A Peak Pulse Current • PD = 1000mW Power Dissipation • Low Collector-Emitter Saturation Voltage, VCE(sat) • 0.60mm2 Package Footprint, 13 times Smaller than SOT23 • 0.5mm Height Package Minimizing Off-Board Profile • Compl

NPN, 15V, 0.5A, DFN1006-3

15V LOW VCE(sat) NPN SURFACE MOUNT TRANSISTOR

Features • BVCEO > 15V • IC = 500mA High Collector Current • ICM = 1A Peak Pulse Current • PD = 1000mW Power Dissipation • Low Collector-Emitter Saturation Voltage, VCE(sat) • 0.60mm2 Package Footprint, 13 times Smaller than SOT23 • 0.5mm Height Package Minimizing Off-Board Profile • Compl

15V LOW VCE(sat) NPN SURFACE MOUNT TRANSISTOR

Features • BVCEO > 15V • IC = 500mA High Collector Current • ICM = 1A Peak Pulse Current • PD = 1000mW Power Dissipation • Low Collector-Emitter Saturation Voltage, VCE(sat) • 0.60mm2 Package Footprint, 13 times Smaller than SOT23 • 0.5mm Height Package Minimizing Off-Board Profile • Compl

15V NPN LOW VCE(sat) TRANSISTOR IN DFN1006

文件：381.71 Kbytes Page：7 Pages

封装/外壳：3-UFDFN 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 15V 0.5A 3DFN 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Silicon Diffused Power Transistor

GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of pc monitors.

SWITCHMODE??Power Rectifier

SWITCHMODE™ Power Rectifier . . . employing the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency switching power sup

SWITCHMODE??Power Rectifier D2PAK Surface Mount Power Package

The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency switching power supplies, free

Silicon Complementary Transistors High Current Switch

Features: Low Collector Emitter Saturation Voltage High Gain–Bandwidth Product Excellent Linearity of hFE Fast Switching Time Applications: Display Drivers High Speed Inverters Converters

15 V low VCEsat NPN double transistor

DESCRIPTION NPN low VCEsat double transistor in a SOT666 plastic package. PNP complement: PBSS3515VS. FEATURES • 300 mW total power dissipation • Very small 1.6 x 1.2 mm ultra thin package • Excellent coplanarity due to straight leads • Low collector-emitter saturation voltage • High