Silicon NPN epitaxial planar type

Silicon NPN epitaxial planar type For general amplification Complementary to DSA2001 ■ Features ● High forward current transfer ratio hFE with excellent linearity ● Low collector-emitter saturation voltage VCE(sat) ● Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant

Silicon NPN epitaxial planar type

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：散装 描述：TRANS NPN 50V 0.1A MINI3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

双极晶体管 - 双极结型晶体管(BJT) Bipolar Power Transistor

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：剪切带（CT）带盒（TB） 描述：TRANS NPN 50V 0.1A MINI3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

1.0 Watt - 28 Volts, Class C Microwave 2000 MHz

GENERAL DESCRIPTION The 2001 is a COMMON BASE transistor capable of providing 1 Watts Class C, RF output power at 2000 MHz. Gold Metalization and diffused ballasting are used to provide high reliability and supreme ruggedness. The transistor uses a fully hermetic High Temperature Solder Sealed pa

US Power Supply Cord with IEC Connector C13, V-Lock, straight

Description - Power Cord, Protection class I, Pin temperature 70 °C, - with V-Lock interlocking system

7½-Digit High Performance Multimeter 8½-Digit High Performance Multimeter

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Snap Bushings

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boxes and ancillary products

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