位置：首页 > IC中文资料第1400页 > DS1258
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
128k x 16 Nonvolatile SRAM DESCRIPTION The DS1258 128k x 16 nonvolatile (NV) SRAMs are 2,097,152-bit fully static, NV SRAMs, organized as 131,072 words by 16 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitors VCCfor an out-of-tolerance condition. When such a condi | Dallas |   | ||
128k x 16 Nonvolatile SRAM DESCRIPTION The DS1258 128k x 16 nonvolatile (NV) SRAMs are 2,097,152-bit fully static, NV SRAMs, organized as 131,072 words by 16 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitors VCCfor an out-of-tolerance condition. When such a condi | Dallas | | ||
128k x 16 Nonvolatile SRAM DESCRIPTION The DS1258 128k x 16 nonvolatile (NV) SRAMs are 2,097,152-bit fully static, NV SRAMs, organized as 131,072 words by 16 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitors VCCfor an out-of-tolerance condition. When such a condi | Dallas | | ||
128k x 16 Nonvolatile SRAM DESCRIPTION The DS1258 128k x 16 nonvolatile (NV) SRAMs are 2,097,152-bit fully static, NV SRAMs, organized as 131,072 words by 16 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitors VCCfor an out-of-tolerance condition. When such a condi | Dallas | | ||
3.3V 128k x 16 Nonvolatile DESCRIPTION The DS1258W 3.3V 128k x 16 Nonvolatile SRAM is a 2,097,152-bit, fully static, nonvolatile (NV) SRAM, organized as 131,072 words by 16 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry, which constantly monitors VCC for an out-of-tolerance condition. W | Dallas | | ||
3.3V 128k x 16 Nonvolatile DESCRIPTION The DS1258W 3.3V 128k x 16 Nonvolatile SRAM is a 2,097,152-bit, fully static, nonvolatile (NV) SRAM, organized as 131,072 words by 16 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry, which constantly monitors VCC for an out-of-tolerance condition. W | Dallas | | ||
3.3V 128k x 16 Nonvolatile DESCRIPTION The DS1258W 3.3V 128k x 16 Nonvolatile SRAM is a 2,097,152-bit, fully static, nonvolatile (NV) SRAM, organized as 131,072 words by 16 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry, which constantly monitors VCC for an out-of-tolerance condition. W | Dallas | | ||
3.3V 128k x 16 Nonvolatile DESCRIPTION The DS1258W 3.3V 128k x 16 Nonvolatile SRAM is a 2,097,152-bit, fully static, nonvolatile (NV) SRAM, organized as 131,072 words by 16 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry, which constantly monitors VCC for an out-of-tolerance condition. W | Dallas | | ||
3.3V 128k x 16 Nonvolatile DESCRIPTION The DS1258W 3.3V 128k x 16 Nonvolatile SRAM is a 2,097,152-bit, fully static, nonvolatile (NV) SRAM, organized as 131,072 words by 16 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry, which constantly monitors VCC for an out-of-tolerance condition. W | Dallas | | ||
3.3V 128k x 16 Nonvolatile DESCRIPTION The DS1258W 3.3V 128k x 16 Nonvolatile SRAM is a 2,097,152-bit, fully static, nonvolatile (NV) SRAM, organized as 131,072 words by 16 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry, which constantly monitors VCC for an out-of-tolerance condition. W | Dallas | | ||
3.3V 128k x 16 Nonvolatile DESCRIPTION The DS1258W 3.3V 128k x 16 Nonvolatile SRAM is a 2,097,152-bit, fully static, nonvolatile (NV) SRAM, organized as 131,072 words by 16 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry, which constantly monitors VCC for an out-of-tolerance condition. W | Dallas | | ||
3.3V 128k x 16 Nonvolatile DESCRIPTION The DS1258W 3.3V 128k x 16 Nonvolatile SRAM is a 2,097,152-bit, fully static, nonvolatile (NV) SRAM, organized as 131,072 words by 16 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry, which constantly monitors VCC for an out-of-tolerance condition. W | Dallas | | ||
3.3V 128k x 16 Nonvolatile DESCRIPTION The DS1258W 3.3V 128k x 16 Nonvolatile SRAM is a 2,097,152-bit, fully static, nonvolatile (NV) SRAM, organized as 131,072 words by 16 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry, which constantly monitors VCC for an out-of-tolerance condition. W | Dallas | | ||
128k x 16 Nonvolatile SRAM DESCRIPTION The DS1258 128k x 16 nonvolatile (NV) SRAMs are 2,097,152-bit fully static, NV SRAMs, organized as 131,072 words by 16 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitors VCCfor an out-of-tolerance condition. When such a condi | Dallas | | ||
128k x 16 Nonvolatile SRAM DESCRIPTION The DS1258 128k x 16 nonvolatile (NV) SRAMs are 2,097,152-bit fully static, NV SRAMs, organized as 131,072 words by 16 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitors VCCfor an out-of-tolerance condition. When such a condi | Dallas | | ||
128k x 16 Nonvolatile SRAM DESCRIPTION The DS1258 128k x 16 nonvolatile (NV) SRAMs are 2,097,152-bit fully static, NV SRAMs, organized as 131,072 words by 16 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitors VCCfor an out-of-tolerance condition. When such a condi | Dallas | | ||
128k x 16 Nonvolatile SRAM DESCRIPTION The DS1258 128k x 16 nonvolatile (NV) SRAMs are 2,097,152-bit fully static, NV SRAMs, organized as 131,072 words by 16 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitors VCCfor an out-of-tolerance condition. When such a condi | Dallas | | ||
128k x 16 Nonvolatile SRAM DESCRIPTION The DS1258 128k x 16 nonvolatile (NV) SRAMs are 2,097,152-bit fully static, NV SRAMs, organized as 131,072 words by 16 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitors VCCfor an out-of-tolerance condition. When such a condi | Dallas | | ||
128k x 16 Nonvolatile SRAM 文件：207.49 Kbytes Page：8 Pages | Maxim 美信 | | ||
128k x 16非易失SRAM | AD 亚德诺 | | ||
封装/外壳：40-DIP 模块（0.610"，15.495mm） 包装：卷带（TR） 描述：IC NVSRAM 2MBIT PARALLEL 40EDIP 集成电路（IC） 存储器 | AD 亚德诺 | | ||
128k x 16 Nonvolatile SRAM 文件：207.49 Kbytes Page：8 Pages | Maxim 美信 | | ||
128k x 16 Nonvolatile SRAM 文件：207.49 Kbytes Page：8 Pages | Maxim 美信 | | ||
128k x 16 Nonvolatile SRAM 文件：207.49 Kbytes Page：8 Pages | Maxim 美信 | | ||
封装/外壳：40-DIP 模块（0.610"，15.495mm） 包装：管件 描述：IC NVSRAM 2MBIT PARALLEL 40EDIP 集成电路（IC） 存储器 | AD 亚德诺 | | ||
128k x 16 Nonvolatile SRAM 文件：207.49 Kbytes Page：8 Pages | Maxim 美信 | | ||
128k x 16 Nonvolatile SRAM 文件：207.49 Kbytes Page：8 Pages | Maxim 美信 | | ||
128k x 16 Nonvolatile SRAM 文件：207.49 Kbytes Page：8 Pages | Maxim 美信 | | ||
3.3V 128k x 16 Nonvolatile SRAM 文件：205.84 Kbytes Page：9 Pages | Maxim 美信 | | ||
3.3V、128k x 16非易失SRAM | AD 亚德诺 | | ||
3.3V 128k x 16 Nonvolatile SRAM 文件：205.84 Kbytes Page：9 Pages | Maxim 美信 | | ||
3.3V 128k x 16 Nonvolatile SRAM 文件：205.84 Kbytes Page：9 Pages | Maxim 美信 | | ||
3.3V 128k x 16 Nonvolatile SRAM 文件：205.84 Kbytes Page：9 Pages | Maxim 美信 | | ||
3.3V 128k x 16 Nonvolatile SRAM 文件：205.84 Kbytes Page：9 Pages | Maxim 美信 | | ||
3.3V 128k x 16 Nonvolatile SRAM 文件：205.84 Kbytes Page：9 Pages | Maxim 美信 | | ||
3.3V 128k x 16 Nonvolatile SRAM 文件：205.84 Kbytes Page：9 Pages | Maxim 美信 | | ||
128k x 16 Nonvolatile SRAM 文件：207.49 Kbytes Page：8 Pages | Maxim 美信 | | ||
128k x 16非易失SRAM | AD 亚德诺 | | ||
128k x 16 Nonvolatile SRAM 文件：207.49 Kbytes Page：8 Pages | Maxim 美信 | | ||
128k x 16 Nonvolatile SRAM 文件：207.49 Kbytes Page：8 Pages | Maxim 美信 | | ||
128k x 16 Nonvolatile SRAM 文件：207.49 Kbytes Page：8 Pages | Maxim 美信 | | ||
128k x 16 Nonvolatile SRAM 文件：207.49 Kbytes Page：8 Pages | Maxim 美信 | | ||
128k x 16 Nonvolatile SRAM 文件：207.49 Kbytes Page：8 Pages | Maxim 美信 | | ||
128k x 16 Nonvolatile SRAM 文件：207.49 Kbytes Page：8 Pages | Maxim 美信 | | ||
QUICK-FIT TERMINALS [KEYSTONE] AVAILABLE IN BRASS OR STEEL TABS • Ideal for rugged multi-insertion applications • Pre-assembled header reduces PC assembly costs • Increases PC board retention strength • Keeps terminals perpendicular • Maintains position for wave soldering | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
Micropower Open Drain Output Hall Effect Switch 文件：1.11725 Mbytes Page：2 Pages | MAT 美斯特类比 | | ||
16-Channel, 24-Bit Analog-to-Digital Converter 文件：1.26462 Mbytes Page：55 Pages | TI 德州仪器 | | ||
16-Channel, 24-Bit Analog-to-Digital Converter 文件：790.87 Kbytes Page：47 Pages | TI 德州仪器 | | ||
16-CHANNEL, 24-BIT ANALOG-TO-DIGITAL CONVERTER 文件：1.06468 Mbytes Page：57 Pages | TI 德州仪器 | |
DS1258产品属性
- 类型
描述
- 型号
DS1258
- 功能描述
NVRAM
- RoHS
否
- 制造商
Maxim Integrated
- 数据总线宽度
8 bit
- 存储容量
1024 Kbit
- 组织
128 K x 8
- 接口类型
Parallel
- 访问时间
70 ns
- 电源电压-最大
5.5 V
- 电源电压-最小
4.5 V
- 工作电流
85 mA
- 最大工作温度
+ 70 C
- 最小工作温度
0 C
- 封装/箱体
EDIP
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NS |
22+ |
DIP |
920 |
全新原装现货!自家库存! |
|||
DALLAS |
1126+ |
DIP |
33 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
DALLAS |
23+ |
MOD |
65480 |
||||
原厂正品 |
23+ |
DIP-8 |
5000 |
原装正品,假一罚十 |
|||
DALLAS |
17+ |
DIP40 |
60000 |
保证进口原装可开17%增值税发票 |
|||
Maxim Integrated |
23+ |
40-EDIP |
7300 |
专注配单,只做原装进口现货 |
|||
MaximIntegrated |
24+ |
16-PDIP |
66800 |
原厂授权一级代理,专注汽车、医疗、工业、新能源！ |
|||
DALLAS |
23+ |
DIP |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
DALLAS |
24+ |
DIP |
428 |
||||
DALLAS |
21+ |
DIP16 |
1638 |
只做原装正品,不止网上数量,欢迎电话微信查询! |
DS1258芯片相关品牌
DS1258规格书下载地址
DS1258参数引脚图相关
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DS1258数据表相关新闻
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2020-10-28DS1259-电池管理芯片
特点 促进不间断电源 只有当主VCC是不可用的使用电池 低正向压降 电源故障信号中断的处理器，或写保护内存 功耗小于100 nA的电池电流 低电量警告信号 电池可电断开后命令 当VCC应用，电池会自动重新连接 配合DS1212非易失控制器×16片直接与备份16的RAM 可选的16引脚SOIC表面贴装封装 DS1259电池管理芯片是一个低成本的电池管理系统的便携性和非易失性电子设备。电池输入引脚连接到一个电池
2013-1-1DS1267-双数字电位器芯片
DS1267双数字电位器芯片由两个数字控制，固态电位器。每个电位器是由256个电阻部分。彼此之间的电阻节和电位器两端的雨刮器都可以访问的抽头点。中的地位电阻阵列上的雨刮器是由一个8位值控制抽头点连接到雨刮器输出。通过3线串行接口完成通信和控制设备。这个接口允许读取或写入设备抽头位置。（或堆叠）系列中增加的总电阻与两个电位器，可连接相同的分辨率。对于多个设备，单处理器的环境中，DS1267可级联或菊花链式。此功能提供一个单一的3线总线控制多台设备的。DS1267是提供了三个标准电阻值，其中包括10，50和100千欧版本。 该设备可用的软件包，包括一个14引脚DIP，16引脚SOIC，和20引脚T
2012-12-11
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