128k x 16 Nonvolatile SRAM

DESCRIPTION The DS1258 128k x 16 nonvolatile (NV) SRAMs are 2,097,152-bit fully static, NV SRAMs, organized as 131,072 words by 16 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitors VCCfor an out-of-tolerance condition. When such a condi

128k x 16非易失SRAM

DS1258 128k x 16非易失(NV) SRAM为2,097,152位、全静态非易失SRAM，按照16位、131,072字排列。每个NV SRAM均自带锂电池及控制电路，控制电路连续监视VCC是否超出容差范围，一旦超出容差范围，锂电池便自动切换至供电状态、写保护将无条件使能、防止数据被破坏。DIP封装的DS1258器件可以用来替代利用各种分立元件构建的128k x 16非易失存储器。该器件没有写次数限制，可直接与微处理器接口、不需要额外的支持电路。 \n• 在没有外部电源的情况下最少可以保存数据10年 \n• 掉电期间数据被自动保护 \n• 独立的向上/向下字节片选输入 \n• 没有写次数限制 \n• 低功耗CMOS操作 \n• 70ns的读写存取时间 \n• 第一次上电前，锂电池与电路断开、维持保鲜状态 \n• ±10%电源工作范围(DS1258Y) \n• 可选择±5%电源工作范围(DS1258AB) \n• 可选的工业级温度范围为-40°C至+85°C，指定为IND;

128k x 16 Nonvolatile SRAM

文件：207.49 Kbytes Page：8 Pages

128k x 16 Nonvolatile SRAM

DESCRIPTION The DS1258 128k x 16 nonvolatile (NV) SRAMs are 2,097,152-bit fully static, NV SRAMs, organized as 131,072 words by 16 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitors VCCfor an out-of-tolerance condition. When such a condi

128k x 16 Nonvolatile SRAM

DESCRIPTION The DS1258 128k x 16 nonvolatile (NV) SRAMs are 2,097,152-bit fully static, NV SRAMs, organized as 131,072 words by 16 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitors VCCfor an out-of-tolerance condition. When such a condi

128k x 16 Nonvolatile SRAM

DESCRIPTION The DS1258 128k x 16 nonvolatile (NV) SRAMs are 2,097,152-bit fully static, NV SRAMs, organized as 131,072 words by 16 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitors VCCfor an out-of-tolerance condition. When such a condi

128k x 16 Nonvolatile SRAM

DESCRIPTION The DS1258 128k x 16 nonvolatile (NV) SRAMs are 2,097,152-bit fully static, NV SRAMs, organized as 131,072 words by 16 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitors VCCfor an out-of-tolerance condition. When such a condi

128k x 16 Nonvolatile SRAM

文件：207.49 Kbytes Page：8 Pages

封装/外壳：40-DIP 模块（0.610"，15.495mm） 包装：卷带（TR） 描述：IC NVSRAM 2MBIT PARALLEL 40EDIP 集成电路（IC） 存储器

128k x 16 Nonvolatile SRAM

文件：207.49 Kbytes Page：8 Pages

128k x 16 Nonvolatile SRAM

文件：207.49 Kbytes Page：8 Pages

封装/外壳：40-DIP 模块（0.610"，15.495mm） 包装：管件 描述：IC NVSRAM 2MBIT PARALLEL 40EDIP 集成电路（IC） 存储器

128k x 16 Nonvolatile SRAM

文件：207.49 Kbytes Page：8 Pages

128k x 16 Nonvolatile SRAM

文件：207.49 Kbytes Page：8 Pages

128k x 16 Nonvolatile SRAM

文件：207.49 Kbytes Page：8 Pages

Low RON Low Voltage Dual SPST Analog Switch

General Description The FSA1256, FSA1256A, FSA1257, FSA1257A, FSA1258, and FSA1258A are high performance dual Single Pole/Single Throw (SPST) analog switches. All devices feature ultra low RON of 1.1: maximum at 4.5V VCC. The FSA1256, FSA1257, and FSA1258 operate over a wide VCC range of 1.65V to

7-Unit, Low-Saturation Driver?

Overview The LB1258 is a 7-unit driver array with large current, low saturation output. It is suited for low voltage, large current drivers. Features • Large current capacity (500mA) and low saturation voltage (0.65V max). • Especially suited for battery-powered printer drivers of various type

PHASE CONTROL THYRISTORS

Phase Control Thyristors

Micropower Low Dropout References

文件：151.61 Kbytes Page：8 Pages