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DS1250价格
参考价格：￥424.7756
型号：DS1250AB-100+ 品牌：Maxim 备注：这里有DS1250多少钱，2025年最近7天走势，今日出价，今日竞价，DS1250批发/采购报价，DS1250行情走势销售排行榜，DS1250报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
4096k Nonvolatile SRAM DESCRIPTION The DS1250 4096k Nonvolatile SRAMs are 4,194,304-bit, fully static, nonvolatile SRAMs organized as 524,288 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such | Dallas |   | ||
4096k Nonvolatile SRAM DESCRIPTION The DS1250 4096k Nonvolatile SRAMs are 4,194,304-bit, fully static, nonvolatile SRAMs organized as 524,288 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such | Dallas | | ||
4096k Nonvolatile SRAM DESCRIPTION The DS1250 4096k Nonvolatile SRAMs are 4,194,304-bit, fully static, nonvolatile SRAMs organized as 524,288 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such | Dallas | | ||
4096k Nonvolatile SRAM DESCRIPTION The DS1250 4096k Nonvolatile SRAMs are 4,194,304-bit, fully static, nonvolatile SRAMs organized as 524,288 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such | Dallas | | ||
4096k Nonvolatile SRAM DESCRIPTION The DS1250 4096k Nonvolatile SRAMs are 4,194,304-bit, fully static, nonvolatile SRAMs organized as 524,288 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such | Dallas | | ||
4096K Nonvolatile SRAM DESCRIPTION The DS1250 4096K Nonvolatile SRAMs are 4,194,304–bit, fully static, nonvolatile SRAMs organized as 524,288 words by 8 bits. Each NV SRAM has a self–contained lithium energy source and control circuitry which constantly monitors VCC for an out–of–tolerance condition. When such a condit | Dallas | | ||
4096K Nonvolatile SRAM DESCRIPTION The DS1250 4096K Nonvolatile SRAMs are 4,194,304–bit, fully static, nonvolatile SRAMs organized as 524,288 words by 8 bits. Each NV SRAM has a self–contained lithium energy source and control circuitry which constantly monitors VCC for an out–of–tolerance condition. When such a condit | Dallas | | ||
4096K Nonvolatile SRAM DESCRIPTION The DS1250 4096K Nonvolatile SRAMs are 4,194,304–bit, fully static, nonvolatile SRAMs organized as 524,288 words by 8 bits. Each NV SRAM has a self–contained lithium energy source and control circuitry which constantly monitors VCC for an out–of–tolerance condition. When such a condit | Dallas | | ||
4096K Nonvolatile SRAM DESCRIPTION The DS1250 4096K Nonvolatile SRAMs are 4,194,304–bit, fully static, nonvolatile SRAMs organized as 524,288 words by 8 bits. Each NV SRAM has a self–contained lithium energy source and control circuitry which constantly monitors VCC for an out–of–tolerance condition. When such a condit | Dallas | | ||
4096K Nonvolatile SRAM DESCRIPTION The DS1250 4096K Nonvolatile SRAMs are 4,194,304–bit, fully static, nonvolatile SRAMs organized as 524,288 words by 8 bits. Each NV SRAM has a self–contained lithium energy source and control circuitry which constantly monitors VCC for an out–of–tolerance condition. When such a condit | Dallas | | ||
3.3V 4096k Nonvolatile SRAM FEATURES 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 512k x 8 volatile static RAM, EEPROM or Flash memory Unlimited write cycles Low-power CMOS Read and write access times as fast as 150 ns | Dallas | | ||
3.3V 4096k Nonvolatile SRAM FEATURES 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 512k x 8 volatile static RAM, EEPROM or Flash memory Unlimited write cycles Low-power CMOS Read and write access times as fast as 150 ns | Dallas | | ||
3.3V 4096k Nonvolatile SRAM FEATURES 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 512k x 8 volatile static RAM, EEPROM or Flash memory Unlimited write cycles Low-power CMOS Read and write access times as fast as 150 ns | Dallas | | ||
4096k Nonvolatile SRAM DESCRIPTION The DS1250 4096k Nonvolatile SRAMs are 4,194,304-bit, fully static, nonvolatile SRAMs organized as 524,288 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such | Dallas | | ||
4096k Nonvolatile SRAM DESCRIPTION The DS1250 4096k Nonvolatile SRAMs are 4,194,304-bit, fully static, nonvolatile SRAMs organized as 524,288 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such | Dallas | | ||
4096k Nonvolatile SRAM DESCRIPTION The DS1250 4096k Nonvolatile SRAMs are 4,194,304-bit, fully static, nonvolatile SRAMs organized as 524,288 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such | Dallas | | ||
4096K Nonvolatile SRAM DESCRIPTION The DS1250 4096K Nonvolatile SRAMs are 4,194,304–bit, fully static, nonvolatile SRAMs organized as 524,288 words by 8 bits. Each NV SRAM has a self–contained lithium energy source and control circuitry which constantly monitors VCC for an out–of–tolerance condition. When such a condit | Dallas | | ||
4096K Nonvolatile SRAM DESCRIPTION The DS1250 4096K Nonvolatile SRAMs are 4,194,304–bit, fully static, nonvolatile SRAMs organized as 524,288 words by 8 bits. Each NV SRAM has a self–contained lithium energy source and control circuitry which constantly monitors VCC for an out–of–tolerance condition. When such a condit | Dallas | | ||
4096K Nonvolatile SRAM DESCRIPTION The DS1250 4096K Nonvolatile SRAMs are 4,194,304–bit, fully static, nonvolatile SRAMs organized as 524,288 words by 8 bits. Each NV SRAM has a self–contained lithium energy source and control circuitry which constantly monitors VCC for an out–of–tolerance condition. When such a condit | Dallas | | ||
4096K Nonvolatile SRAM DESCRIPTION The DS1250 4096K Nonvolatile SRAMs are 4,194,304–bit, fully static, nonvolatile SRAMs organized as 524,288 words by 8 bits. Each NV SRAM has a self–contained lithium energy source and control circuitry which constantly monitors VCC for an out–of–tolerance condition. When such a condit | Dallas | | ||
4096k Nonvolatile SRAM DESCRIPTION The DS1250 4096k Nonvolatile SRAMs are 4,194,304-bit, fully static, nonvolatile SRAMs organized as 524,288 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such | Dallas | | ||
4096k Nonvolatile SRAM DESCRIPTION The DS1250 4096k Nonvolatile SRAMs are 4,194,304-bit, fully static, nonvolatile SRAMs organized as 524,288 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such | Dallas | | ||
4096k Nonvolatile SRAM 文件：242.48 Kbytes Page：10 Pages | Maxim 美信 | | ||
封装/外壳：32-DIP 模块（0.600"，15.24mm） 包装：管件 描述：IC NVSRAM 4MBIT PARALLEL 32EDIP 集成电路（IC） 存储器 | AD 亚德诺 | | ||
封装/外壳：32-DIP 模块（0.600"，15.24mm） 包装：卷带（TR） 描述：IC NVSRAM 4M PARALLEL 32EDIP 集成电路（IC） 存储器 | AD 亚德诺 | | ||
4096k Nonvolatile SRAM 文件：242.48 Kbytes Page：10 Pages | Maxim 美信 | | ||
4096k Nonvolatile SRAM 文件：242.48 Kbytes Page：10 Pages | Maxim 美信 | | ||
4096k Nonvolatile SRAM 文件：242.48 Kbytes Page：10 Pages | Maxim 美信 | | ||
4096k Nonvolatile SRAM 文件：242.48 Kbytes Page：10 Pages | Maxim 美信 | | ||
4096K Nonvolatile SRAM 文件：323.46 Kbytes Page：9 Pages | Maxim 美信 | | ||
4096K Nonvolatile SRAM | AD 亚德诺 | | ||
DIESEL GENERATOR SET AIR CHARGE-AIR COOLING 文件：1.47534 Mbytes Page：4 Pages | MTU MTU Onsite Energy Corporation | | ||
3.3V 4096k Nonvolatile SRAM 文件：226.07 Kbytes Page：9 Pages | Maxim 美信 | | ||
3.3V、4096k非易失SRAM | AD 亚德诺 | | ||
3.3V 4096k Nonvolatile SRAM 文件：226.07 Kbytes Page：9 Pages | Maxim 美信 | | ||
3.3V 4096k Nonvolatile SRAM 文件：226.07 Kbytes Page：9 Pages | Maxim 美信 | | ||
3.3V 4096k Nonvolatile SRAM 文件：226.07 Kbytes Page：9 Pages | Maxim 美信 | | ||
3.3V 4096k Nonvolatile SRAM 文件：226.07 Kbytes Page：9 Pages | Maxim 美信 | | ||
4096k非易失SRAM | AD 亚德诺 | | ||
4096k Nonvolatile SRAM 文件：242.48 Kbytes Page：10 Pages | Maxim 美信 | | ||
4096k Nonvolatile SRAM 文件：242.48 Kbytes Page：10 Pages | Maxim 美信 | | ||
4096k Nonvolatile SRAM 文件：242.48 Kbytes Page：10 Pages | Maxim 美信 | | ||
4096K Nonvolatile SRAM 文件：323.46 Kbytes Page：9 Pages | Maxim 美信 | | ||
4096k Nonvolatile SRAM 文件：242.48 Kbytes Page：10 Pages | Maxim 美信 | | ||
4096k Nonvolatile SRAM 文件：242.48 Kbytes Page：10 Pages | Maxim 美信 | | ||
Interconnection Cord with Appliance Outlet For low voltage, Straight 文件：258.3 Kbytes Page：2 Pages | SCHURTER 硕特 | | ||
Heyco짰 Original Strain Relief Bushings 文件：105.91 Kbytes Page：1 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
Single Chip Low Cost Low Power RF-Transmitter 文件：882.2 Kbytes Page：50 Pages | TI 德州仪器 | | ||
SUPER HEAVY DUTY 文件：147.04 Kbytes Page：2 Pages | ENERGIZER 劲量 | | ||
Original Strain Relief Bushings 文件：104.39 Kbytes Page：1 Pages | Heyco | |
DS1250产品属性
- 类型
描述
- 型号
DS1250
- 制造商
Maxim Integrated Products
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
DALLAS |
24+ |
NA/ |
16 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
Maxim(美信) |
24+ |
标准封装 |
17048 |
原厂渠道供应,大量现货,原型号开票。 |
|||
DALLAS |
23+ |
DIP |
6500 |
全新原装假一赔十 |
|||
25+ |
DIP-16P |
18000 |
原厂直接发货进口原装 |
||||
DALLAS |
25+ |
DIP |
1311 |
原装正品,假一罚十! |
|||
DAL |
24+/25+ |
87 |
原装正品现货库存价优 |
||||
MAXIM |
24+ |
DIP-32 |
2456 |
主打MAXIM品牌价格绝对优势 |
|||
DALLAS |
25+ |
DIP-32 |
3200 |
全新原装、诚信经营、公司现货销售 |
|||
DALLAS |
23+ |
DIP |
2525 |
原厂原装正品 |
|||
DS |
DIP |
85000 |
全新原装现货 一级代理价格优势 |
DS1250芯片相关品牌
DS1250规格书下载地址
DS1250参数引脚图相关
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- DS1251W-120IND+
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- DS1251P
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- DS1250YP-70+
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- DS1245W-150+
- DS1245W-100IND+
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- DS1244P
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- DS1243Y
- DS1243
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- DS1238A
- DS1238
- DS1236A
- DS1236
- DS1235Y
DS1250数据表相关新闻
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2020-10-31DS125BR820NJYT 接口-信号缓冲器、中继器
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2020-10-28DS1259-电池管理芯片
特点 促进不间断电源 只有当主VCC是不可用的使用电池 低正向压降 电源故障信号中断的处理器，或写保护内存 功耗小于100 nA的电池电流 低电量警告信号 电池可电断开后命令 当VCC应用，电池会自动重新连接 配合DS1212非易失控制器×16片直接与备份16的RAM 可选的16引脚SOIC表面贴装封装 DS1259电池管理芯片是一个低成本的电池管理系统的便携性和非易失性电子设备。电池输入引脚连接到一个电池
2013-1-1DS1267-双数字电位器芯片
DS1267双数字电位器芯片由两个数字控制，固态电位器。每个电位器是由256个电阻部分。彼此之间的电阻节和电位器两端的雨刮器都可以访问的抽头点。中的地位电阻阵列上的雨刮器是由一个8位值控制抽头点连接到雨刮器输出。通过3线串行接口完成通信和控制设备。这个接口允许读取或写入设备抽头位置。（或堆叠）系列中增加的总电阻与两个电位器，可连接相同的分辨率。对于多个设备，单处理器的环境中，DS1267可级联或菊花链式。此功能提供一个单一的3线总线控制多台设备的。DS1267是提供了三个标准电阻值，其中包括10，50和100千欧版本。 该设备可用的软件包，包括一个14引脚DIP，16引脚SOIC，和20引脚T
2012-12-11
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