| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
DRV8329 | DRV8329 4.5 to 60 V Three-phase BLDC Gate Driver 1 Features • 65-V Three Phase Half-Bridge Gate Driver – Drives 3 High-Side and 3 Low-Side N-Channel MOSFETs (NMOS) – 4.5 to 60-V Operating Voltage Range – Supports 100 PWM Duty Cycle with Trickle Charge pump • Bootstrap based Gate Driver Architecture – 1000-mA Maximum Peak Source Current | TI 德州仪器 |   | |
DRV8329 | DRV8329 4.5 to 60 V Three-phase BLDC Gate Driver 1 Features • 65-V Three Phase Half-Bridge Gate Driver – Drives 3 High-Side and 3 Low-Side N-Channel MOSFETs (NMOS) – 4.5 to 60-V Operating Voltage Range – Supports 100 PWM Duty Cycle with Trickle Charge pump • Bootstrap based Gate Driver Architecture – 1000-mA Maximum Peak Source Current | TI 德州仪器 | | |
DRV8329 | DRV8329-Q1 4.5 to 60 V Three-phase BLDC Gate Driver 1 Features • 65-V Three Phase Half-Bridge Gate Driver – Drives 3 High-Side and 3 Low-Side N-Channel MOSFETs (NMOS) – 4.5 to 60-V Operating Voltage Range – Supports 100% PWM Duty Cycle with Trickle Charge pump • Bootstrap based Gate Driver Architecture – 1000-mA Maximum Peak Source Curr | TI 德州仪器 | | |
DRV8329 | DRV8329-Q1 4.5 to 60V Three-phase BLDC Gate Driver 1 Features • 65V Three Phase Half-Bridge Gate Driver – Drives 3 High-Side and 3 Low-Side N-Channel MOSFETs (NMOS) – 4.5 to 60V Operating Voltage Range – Supports 100% PWM Duty Cycle with Trickle Charge pump • Bootstrap based Gate Driver Architecture – 1000mA Maximum Peak Source Current | TI 德州仪器 | | |
DRV8329 | DRV8329 4.5 to 60 V Three-phase BLDC Gate Driver 1 Features • 65-V Three Phase Half-Bridge Gate Driver – Drives 3 High-Side and 3 Low-Side N-Channel MOSFETs (NMOS) – 4.5 to 60-V Operating Voltage Range – Supports 100% PWM Duty Cycle with Trickle Charge pump • Bootstrap based Gate Driver Architecture – 1000-mA Maximum Peak Source Curr | TI 德州仪器 | | |
DRV8329 | 60-V 1000/2000 mA 3-phase gate driver with single current sense amplifier | TI 德州仪器 | | |
DRV8329 4.5 to 60 V Three-phase BLDC Gate Driver 1 Features • 65-V Three Phase Half-Bridge Gate Driver – Drives 3 High-Side and 3 Low-Side N-Channel MOSFETs (NMOS) – 4.5 to 60-V Operating Voltage Range – Supports 100 PWM Duty Cycle with Trickle Charge pump • Bootstrap based Gate Driver Architecture – 1000-mA Maximum Peak Source Current | TI 德州仪器 | | ||
DRV8329 4.5 to 60 V Three-phase BLDC Gate Driver 1 Features • 65-V Three Phase Half-Bridge Gate Driver – Drives 3 High-Side and 3 Low-Side N-Channel MOSFETs (NMOS) – 4.5 to 60-V Operating Voltage Range – Supports 100% PWM Duty Cycle with Trickle Charge pump • Bootstrap based Gate Driver Architecture – 1000-mA Maximum Peak Source Curr | TI 德州仪器 | | ||
DRV8329 4.5 to 60 V Three-phase BLDC Gate Driver 1 Features • 65-V Three Phase Half-Bridge Gate Driver – Drives 3 High-Side and 3 Low-Side N-Channel MOSFETs (NMOS) – 4.5 to 60-V Operating Voltage Range – Supports 100 PWM Duty Cycle with Trickle Charge pump • Bootstrap based Gate Driver Architecture – 1000-mA Maximum Peak Source Current | TI 德州仪器 | | ||
DRV8329 4.5 to 60 V Three-phase BLDC Gate Driver 1 Features • 65-V Three Phase Half-Bridge Gate Driver – Drives 3 High-Side and 3 Low-Side N-Channel MOSFETs (NMOS) – 4.5 to 60-V Operating Voltage Range – Supports 100% PWM Duty Cycle with Trickle Charge pump • Bootstrap based Gate Driver Architecture – 1000-mA Maximum Peak Source Curr | TI 德州仪器 | | ||
DRV8329-Q1 4.5 to 60 V Three-phase BLDC Gate Driver 1 Features • 65-V Three Phase Half-Bridge Gate Driver – Drives 3 High-Side and 3 Low-Side N-Channel MOSFETs (NMOS) – 4.5 to 60-V Operating Voltage Range – Supports 100% PWM Duty Cycle with Trickle Charge pump • Bootstrap based Gate Driver Architecture – 1000-mA Maximum Peak Source Curr | TI 德州仪器 | | ||
DRV8329-Q1 4.5 to 60V Three-phase BLDC Gate Driver 1 Features • 65V Three Phase Half-Bridge Gate Driver – Drives 3 High-Side and 3 Low-Side N-Channel MOSFETs (NMOS) – 4.5 to 60V Operating Voltage Range – Supports 100% PWM Duty Cycle with Trickle Charge pump • Bootstrap based Gate Driver Architecture – 1000mA Maximum Peak Source Current | TI 德州仪器 | | ||
DRV8329-Q1 4.5 to 60V Three-phase BLDC Gate Driver 1 Features • 65V Three Phase Half-Bridge Gate Driver – Drives 3 High-Side and 3 Low-Side N-Channel MOSFETs (NMOS) – 4.5 to 60V Operating Voltage Range – Supports 100% PWM Duty Cycle with Trickle Charge pump • Bootstrap based Gate Driver Architecture – 1000mA Maximum Peak Source Current | TI 德州仪器 | | ||
DRV8329-Q1 4.5 to 60 V Three-phase BLDC Gate Driver 1 Features • 65-V Three Phase Half-Bridge Gate Driver – Drives 3 High-Side and 3 Low-Side N-Channel MOSFETs (NMOS) – 4.5 to 60-V Operating Voltage Range – Supports 100% PWM Duty Cycle with Trickle Charge pump • Bootstrap based Gate Driver Architecture – 1000-mA Maximum Peak Source Curr | TI 德州仪器 | | ||
DRV8329 4.5 to 60 V Three-phase BLDC Gate Driver 1 Features • 65-V Three Phase Half-Bridge Gate Driver – Drives 3 High-Side and 3 Low-Side N-Channel MOSFETs (NMOS) – 4.5 to 60-V Operating Voltage Range – Supports 100 PWM Duty Cycle with Trickle Charge pump • Bootstrap based Gate Driver Architecture – 1000-mA Maximum Peak Source Current | TI 德州仪器 | | ||
DRV8329 4.5 to 60 V Three-phase BLDC Gate Driver 1 Features • 65-V Three Phase Half-Bridge Gate Driver – Drives 3 High-Side and 3 Low-Side N-Channel MOSFETs (NMOS) – 4.5 to 60-V Operating Voltage Range – Supports 100 PWM Duty Cycle with Trickle Charge pump • Bootstrap based Gate Driver Architecture – 1000-mA Maximum Peak Source Current | TI 德州仪器 | | ||
DRV8329 4.5 to 60 V Three-phase BLDC Gate Driver 1 Features • 65-V Three Phase Half-Bridge Gate Driver – Drives 3 High-Side and 3 Low-Side N-Channel MOSFETs (NMOS) – 4.5 to 60-V Operating Voltage Range – Supports 100% PWM Duty Cycle with Trickle Charge pump • Bootstrap based Gate Driver Architecture – 1000-mA Maximum Peak Source Curr | TI 德州仪器 | | ||
DRV8329 4.5 to 60 V Three-phase BLDC Gate Driver 1 Features • 65-V Three Phase Half-Bridge Gate Driver – Drives 3 High-Side and 3 Low-Side N-Channel MOSFETs (NMOS) – 4.5 to 60-V Operating Voltage Range – Supports 100% PWM Duty Cycle with Trickle Charge pump • Bootstrap based Gate Driver Architecture – 1000-mA Maximum Peak Source Curr | TI 德州仪器 | | ||
DRV8329 4.5 to 60 V Three-phase BLDC Gate Driver 1 Features • 65-V Three Phase Half-Bridge Gate Driver – Drives 3 High-Side and 3 Low-Side N-Channel MOSFETs (NMOS) – 4.5 to 60-V Operating Voltage Range – Supports 100 PWM Duty Cycle with Trickle Charge pump • Bootstrap based Gate Driver Architecture – 1000-mA Maximum Peak Source Current | TI 德州仪器 | | ||
DRV8329-Q1 4.5 to 60V Three-phase BLDC Gate Driver 1 Features • 65V Three Phase Half-Bridge Gate Driver – Drives 3 High-Side and 3 Low-Side N-Channel MOSFETs (NMOS) – 4.5 to 60V Operating Voltage Range – Supports 100% PWM Duty Cycle with Trickle Charge pump • Bootstrap based Gate Driver Architecture – 1000mA Maximum Peak Source Current | TI 德州仪器 | | ||
DRV8329 4.5 to 60 V Three-phase BLDC Gate Driver 1 Features • 65-V Three Phase Half-Bridge Gate Driver – Drives 3 High-Side and 3 Low-Side N-Channel MOSFETs (NMOS) – 4.5 to 60-V Operating Voltage Range – Supports 100 PWM Duty Cycle with Trickle Charge pump • Bootstrap based Gate Driver Architecture – 1000-mA Maximum Peak Source Current | TI 德州仪器 | | ||
DRV8329 4.5 to 60 V Three-phase BLDC Gate Driver 1 Features • 65-V Three Phase Half-Bridge Gate Driver – Drives 3 High-Side and 3 Low-Side N-Channel MOSFETs (NMOS) – 4.5 to 60-V Operating Voltage Range – Supports 100% PWM Duty Cycle with Trickle Charge pump • Bootstrap based Gate Driver Architecture – 1000-mA Maximum Peak Source Curr | TI 德州仪器 | | ||
DRV8329-Q1 4.5 to 60V Three-phase BLDC Gate Driver 1 Features • 65V Three Phase Half-Bridge Gate Driver – Drives 3 High-Side and 3 Low-Side N-Channel MOSFETs (NMOS) – 4.5 to 60V Operating Voltage Range – Supports 100% PWM Duty Cycle with Trickle Charge pump • Bootstrap based Gate Driver Architecture – 1000mA Maximum Peak Source Current | TI 德州仪器 | | ||
DRV8329-Q1 4.5 to 60V Three-phase BLDC Gate Driver 1 Features • 65V Three Phase Half-Bridge Gate Driver – Drives 3 High-Side and 3 Low-Side N-Channel MOSFETs (NMOS) – 4.5 to 60V Operating Voltage Range – Supports 100% PWM Duty Cycle with Trickle Charge pump • Bootstrap based Gate Driver Architecture – 1000mA Maximum Peak Source Current | TI 德州仪器 | | ||
DRV8329 4.5 to 60 V Three-phase BLDC Gate Driver 1 Features • 65-V Three Phase Half-Bridge Gate Driver – Drives 3 High-Side and 3 Low-Side N-Channel MOSFETs (NMOS) – 4.5 to 60-V Operating Voltage Range – Supports 100% PWM Duty Cycle with Trickle Charge pump • Bootstrap based Gate Driver Architecture – 1000-mA Maximum Peak Source Curr | TI 德州仪器 | | ||
DRV8329 4.5 to 60 V Three-phase BLDC Gate Driver 1 Features • 65-V Three Phase Half-Bridge Gate Driver – Drives 3 High-Side and 3 Low-Side N-Channel MOSFETs (NMOS) – 4.5 to 60-V Operating Voltage Range – Supports 100 PWM Duty Cycle with Trickle Charge pump • Bootstrap based Gate Driver Architecture – 1000-mA Maximum Peak Source Current | TI 德州仪器 | | ||
DRV8329 4.5 to 60 V Three-phase BLDC Gate Driver 1 Features • 65-V Three Phase Half-Bridge Gate Driver – Drives 3 High-Side and 3 Low-Side N-Channel MOSFETs (NMOS) – 4.5 to 60-V Operating Voltage Range – Supports 100 PWM Duty Cycle with Trickle Charge pump • Bootstrap based Gate Driver Architecture – 1000-mA Maximum Peak Source Current | TI 德州仪器 | | ||
DRV8329 4.5 to 60 V Three-phase BLDC Gate Driver 1 Features • 65-V Three Phase Half-Bridge Gate Driver – Drives 3 High-Side and 3 Low-Side N-Channel MOSFETs (NMOS) – 4.5 to 60-V Operating Voltage Range – Supports 100% PWM Duty Cycle with Trickle Charge pump • Bootstrap based Gate Driver Architecture – 1000-mA Maximum Peak Source Curr | TI 德州仪器 | | ||
DRV8329-Q1 4.5 to 60V Three-phase BLDC Gate Driver 1 Features • 65V Three Phase Half-Bridge Gate Driver – Drives 3 High-Side and 3 Low-Side N-Channel MOSFETs (NMOS) – 4.5 to 60V Operating Voltage Range – Supports 100% PWM Duty Cycle with Trickle Charge pump • Bootstrap based Gate Driver Architecture – 1000mA Maximum Peak Source Current | TI 德州仪器 | | ||
DRV8329 4.5 to 60 V Three-phase BLDC Gate Driver 1 Features • 65-V Three Phase Half-Bridge Gate Driver – Drives 3 High-Side and 3 Low-Side N-Channel MOSFETs (NMOS) – 4.5 to 60-V Operating Voltage Range – Supports 100% PWM Duty Cycle with Trickle Charge pump • Bootstrap based Gate Driver Architecture – 1000-mA Maximum Peak Source Curr | TI 德州仪器 | | ||
DRV8329-Q1 4.5 to 60V Three-phase BLDC Gate Driver 1 Features • 65V Three Phase Half-Bridge Gate Driver – Drives 3 High-Side and 3 Low-Side N-Channel MOSFETs (NMOS) – 4.5 to 60V Operating Voltage Range – Supports 100% PWM Duty Cycle with Trickle Charge pump • Bootstrap based Gate Driver Architecture – 1000mA Maximum Peak Source Current | TI 德州仪器 | | ||
DRV8329-Q1 4.5 to 60 V Three-phase BLDC Gate Driver 1 Features • 65-V Three Phase Half-Bridge Gate Driver – Drives 3 High-Side and 3 Low-Side N-Channel MOSFETs (NMOS) – 4.5 to 60-V Operating Voltage Range – Supports 100% PWM Duty Cycle with Trickle Charge pump • Bootstrap based Gate Driver Architecture – 1000-mA Maximum Peak Source Curr | TI 德州仪器 | | ||
DRV8329-Q1 4.5 to 60V Three-phase BLDC Gate Driver 1 Features • 65V Three Phase Half-Bridge Gate Driver – Drives 3 High-Side and 3 Low-Side N-Channel MOSFETs (NMOS) – 4.5 to 60V Operating Voltage Range – Supports 100% PWM Duty Cycle with Trickle Charge pump • Bootstrap based Gate Driver Architecture – 1000mA Maximum Peak Source Current | TI 德州仪器 | | ||
具有单个电流检测放大器的汽车级 60V 三相栅极驱动器 | TI 德州仪器 | | ||
LED SPACER MOUNTS [KEYSTONE] “UNIVERSAL” FOR T-1 & T-1 3/4 • Unique design separates leads and retains Tri-Lead and Bi-Lead components. • Designed for PC board mounting of Tri-Lead and Bi-Lead T-1 and T-1 3/4 LEDS • Provides height control, lead retention and stability. • Also suitable for mounting lamps | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
LED SPACER MOUNTS [KEYSTONE] “UNIVERSAL” FOR T-1 & T-1 3/4 • Unique design separates leads and retains Tri-Lead and Bi-Lead components. • Designed for PC board mounting of Tri-Lead and Bi-Lead T-1 and T-1 3/4 LEDS • Provides height control, lead retention and stability. • Also suitable for mounting lamps | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
LED SPACER MOUNTS [KEYSTONE] “UNIVERSAL” FOR T-1 & T-1 3/4 • Unique design separates leads and retains Tri-Lead and Bi-Lead components. • Designed for PC board mounting of Tri-Lead and Bi-Lead T-1 and T-1 3/4 LEDS • Provides height control, lead retention and stability. • Also suitable for mounting lamps | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
LED SPACER MOUNTS UNIVERSAL” FOR T-1 & T-1 3/4 • Unique design separates leads and retains Tri-Lead and Bi-Lead components. • Designed for PC board mounting of Tri-Lead and Bi-Lead T-1 and T-13/4 LEDS • Provides height control, lead retention and stability. • Also suitable for mounting lamps, resistors, transis | KEYSTONE Keystone Electronics Corp. | | ||
Wire-Thread-Inserts 文件：102.37 Kbytes Page：3 Pages | V-COIL | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TI/德州仪器 |
25+ |
原厂封装 |
10280 |
原厂授权代理,专注军工、汽车、医疗、工业、新能源！ |
|||
TI |
23+ |
N/A |
7000 |
||||
TI |
25+ |
原封装 |
66330 |
郑重承诺只做原装进口现货 |
|||
TI/德州仪器 |
25+ |
原厂封装 |
10280 |
||||
TI |
24+ |
con |
35960 |
查现货到京北通宇商城 |
|||
TI德州仪器 |
22+ |
24000 |
原装正品现货,实单可谈,量大价优 |
||||
TI/德州仪器 |
25+ |
原厂封装 |
9999 |
||||
TI |
23+ |
N/A |
8000 |
只做原装现货 |
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DRV8329规格书下载地址
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- DRV8328DRUYR
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- DRV8328D
- DRV8328CRUYR
- DRV8328CRUY
- DRV8328C
- DRV8328BRUYR
- DRV8328BRUY
- DRV8328B
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DdatasheetPDF页码索引
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