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DRV8329BREE数据手册规格书PDF详情
1 Features
• 65-V Three Phase Half-Bridge Gate Driver
– Drives 3 High-Side and 3 Low-Side N-Channel
MOSFETs (NMOS)
– 4.5 to 60-V Operating Voltage Range
– Supports 100 PWM Duty Cycle with Trickle
Charge pump
• Bootstrap based Gate Driver Architecture
– 1000-mA Maximum Peak Source Current
– 2000-mA Maximum Peak Sink Current
• Integrated Current Sense Amplifier with low input
offset (optimized for 1 shunt)
– Adjustable Gain (5, 10, 20, 40 V/V)
• Hardware interface provides simple configuration
• Ultra-low power sleep mode <1 uA at 25 ̊C
• 4-ns (typ) propagation delay matching between
phases
• Independent driver shutdown path (DRVOFF)
• 65-V tolerant wake pin (nSLEEP)
• Supports negative transients upto -10-V on SHx
• 6x and 3x PWM Modes
• Supports 3.3-V, and 5-V Logic Inputs
• Accurate LDO (AVDD), 3.3 V ±3, 80 mA
• Compact QFN Packages and Footprints
• Adjustable VDS overcurrent threshold through
VDSLVL pin
• Adjustable deadtime through DT pin
• Efficient System Design With Power Blocks
• Integrated Protection Features
– PVDD Undervoltage Lockout (PVDDUV)
– GVDD Undervoltage (GVDDUV)
– Bootstrap Undervoltage (BST_UV)
– Overcurrent Protection (VDS_OCP, SEN_OCP)
– Thermal Shutdown (OTSD)
– Fault Condition Indicator (nFAULT)
2 Applications
• Brushless-DC (BLDC) Motor Modules and PMSM
• Cordless Garden and Power Tools, Lawnmowers
• Appliances Fans and Pumps
• Servo Drives
• E-Bikes, E-Scooters, and E-Mobility
• Cordless Vacuum Cleaners
• Drones
• Industrial & Logistics Robots, and RC Toys
3 Description
The DRV8329 family of devices is an integrated
gate driver for three-phase applications. The devices
provide three half-bridge gate drivers, each capable
of driving high-side and low-side N-channel power
MOSFETs. The device generates the correct gate
drive voltages using an internal charge pump and
enhances the high-side MOSFETs using a bootstrap
circuit. A trickle charge pump is included to support
100 duty cycle. The Gate Drive architecture
supports peak gate drive currents up to 1-A source
and 2-A sink. The DRV8329 can operate from a single
power supply and supports a wide input supply range
of 4.5 to 60 V.
The 6x and 3x PWM modes allow for simple
interfacing to controller circuits. The device has
integrated accurate 3.3-V LDO that can be used
to power external controller and can be used as
reference for CSA. The configuration settings for the
device are configurable through hardware (H/W) pins.
The DRV8329 devices integrate low-side current
sense amplifier that allow current sensing for sum of
current from all three phases of the drive stage.
A low-power sleep mode is provided to achieve
low quiescent current by shutting down most of
the internal circuitry. Internal protection functions
are provided for undervoltage lockout, GVDD fault,
MOSFET overcurrent, MOSFET short circuit, and
overtemperature. Fault conditions are indicated on
nFAULT pin.
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
TI |
23+ |
N/A |
8000 |
专注配单,只做原装进口现货 |
|||
TI |
23+ |
N/A |
8000 |
只做原装现货 |
|||
TI |
23+ |
N/A |
7000 |
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Texas Instruments 美国德州仪器公司
德州仪器(Texas Instruments),简称TI,是全球领先的半导体公司,为现实世界的信号处理提供创新的数字信号处理(DSP)及模拟器件技术。除半导体业务外,还提供包括传感与控制、教育产品和数字光源处理解决方案。TI总部位于美国德克萨斯州的达拉斯,并在25多个国家设有制造、设计或销售机构。 德州仪器(TI)是全球领先的数字信号处理与模拟技术半导体供应商,亦是推动因特网时代不断发展的半导体引擎。 ----作为实时技术的领导者,TI正在快速发展,在无线与宽带接入等大型市场及数码相机和数字音频等新兴市场方面,TI凭借性能卓越的半导体解决方案不断推动着因特网时代前进的步伐! ----TI预想未