位置:首页 > IC中文资料第6232页 > DR208G

型号 功能描述 生产厂家 企业 LOGO 操作
DR208G

GLASS PASSIVATED JUNCTION SILICON RECTIFIERS

PRV : 50 - 1000 Volts Io : 2.0 Amperes FEATURES : * Glass passivated chip * High current capability * High reliability * Low reverse current * Low forward voltage drop

EIC

DR208G

GLASS PASSIVATED JUNCTION RECTIFIER

Reverse Voltage - 50 to 1000 Volts Forward Current - 2.0 Amperes Features ● Plastic package has Underwriters Laboratory Flammability Classification 94V-0 utilizing Flame retardant epoxy molding compound ● 2.0 ampere operation at TA=55 with no thermal runaway ● Glass passivated junction in DO-1

GOOD-ARK

固锝电子

POWER TRANSISTORS(5.0A,1300-1500V,55W)

5.0 AMPERE POWER TRANSISTORS 1300-1500 VOLTS 55 WATTS

MOSPEC

统懋

5.0 AMPERES NPN SILICON POWER TRANSISTOR 700 VOLTS

Horizontal Deflection Transistor . . . designed for use in televisions. • Collector–Emitter Voltages VCES 1500 Volts • Fast Switching — 400 ns Typical Fall Time • Low Thermal Resistance 1°C/W Increased Reliability • Glass Passivated (Patented Photoglass). Triple Diffused Mesa Te

MOTOROLA

摩托罗拉

POWER TRANSISTORS(5.0A,1300-1500V,55W)

5.0 AMPERE POWER TRANSISTORS 1300-1500 VOLTS 55 WATTS

MOSPEC

统懋

SMALL OUTLINE OPTOISOLATORS TRANSISTOR OUTPUT

These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high density applications, and eliminate the need for through–the–board mounti

MOTOROLA

摩托罗拉

SCHOTTKY BARRIER RECTIFIERS(2.0A,70-100V)

SCHOTTKY BARRIER RECTIFIER 2.0A 70-100V

MOSPEC

统懋

DR208G产品属性

  • 类型

    描述

  • 型号

    DR208G

  • 制造商

    EIC

  • 制造商全称

    EIC discrete Semiconductors

  • 功能描述

    GLASS PASSIVATED JUNCTION SILICON RECTIFIERS

DR208G数据表相关新闻