POWER TRANSISTORS(5.0A,1300-1500V,55W)

5.0 AMPERE POWER TRANSISTORS 1300-1500 VOLTS 55 WATTS

5.0 AMPERES NPN SILICON POWER TRANSISTOR 700 VOLTS

Horizontal Deflection Transistor . . . designed for use in televisions. • Collector–Emitter Voltages VCES 1500 Volts • Fast Switching — 400 ns Typical Fall Time • Low Thermal Resistance 1°C/W Increased Reliability • Glass Passivated (Patented Photoglass). Triple Diffused Mesa Te

NPN SILICON POWER TRANSISTOR

Horizontal Deflection Transistor . . . designed for use in televisions. • Collector–Emitter Voltages VCES 1500 Volts • Fast Switching — 400 ns Typical Fall Time • Low Thermal Resistance 1°C/W Increased Reliability • Glass Passivated (Patented Photoglass). Triple Diffused Mesa Te

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

DESCRIPTION The BU208A, BU508A and BU508AFI are manufactured using Multiepitaxial Mesa technology for cost-effective high performance and use a Hollow Emitter structure to enhance switching speeds. ■ STMicroelectronics PREFERRED SALESTYPES ■ HIGH VOLTAGE CAPABILITY (> 1500 V) ■ FULLY INSULATE

NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR(COLOR TV HORIZONTAL OUTPUT APPLICATIONS)

NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR • High Collector-Base Voltage(VCBO=1500V) • High Speed Switching

NPN SILICON POWER TRANSISTORS

NPN Silicon Power Transistors

Power Transistors

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6674, 2N6675 types are NPN Silicon Triple Diffused Mesa Power Transistors designed for high voltage switching applications. MARKING: FULL PART NUMBER

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3 package ·High voltage, high speed APPLICATIONS ·For use in horizontal deflection output stages for color TV receivers.

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3 package ·High voltage, high speed APPLICATIONS ·For use in horizontal deflection output stages for color TV receives.

SILICON DIFFUSED POWER TRANSISTOR

DESCRIPTION The UTC BU208A is a high voltage, high power, high speed switching NPN transistor in a mental envelope, primarily for use in power supply and horizontal deflection circuits of color television receivers.

HORIZONTAL DEFLECTION TRANSISTOR

5.0 AMPERE POWER TRANSISTORS 1300-1500 VOLTS 55 WATTS ...specifically designedfor use in large screen color deflection circuits. FEATURES: * Collector-EmitterSustaining Voltage - VC6X = 1300 V (Min.) - BU207 = 1500V (Win.)-BU208 * Glastivated Base-Collector Junction

NPN SILICON PLANAR POWER TRANSISTOR

NPN SILICON PLANAR POWER TRANSISTOR TO-3 Metal Can Package

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

APPLICATIONS: n HORIZONTAL DEFLECTION FOR COLOUR TV DESCRIPTION The BU208A, BU508A and BU508AFI are manufactured using Multiepitaxial Mesa technology for cost-effective high performance and use a Hollow Emitter structure to enhance switching speeds.

封装/外壳：TO-204AA，TO-3 包装：散装 描述：TRANS NPN 700V 8A TO3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Through-Hole Transistor-Bipolar Power (>1A) NPN High Voltage

功率开关晶体管

三极管

Silicon NPN Power Transistors

文件：112.57 Kbytes Page：3 Pages

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

文件：240.24 Kbytes Page：8 Pages

SEMICONDUCTORS

文件：2.43533 Mbytes Page：31 Pages

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

文件：240.24 Kbytes Page：8 Pages

SILICON DIFFUSED POWER TRANSISTOR

文件：57.8 Kbytes Page：2 Pages

POWER TRANSISTORS(5.0A,1300-1500V,55W)

5.0 AMPERE POWER TRANSISTORS 1300-1500 VOLTS 55 WATTS

SMALL OUTLINE OPTOISOLATORS TRANSISTOR OUTPUT

These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high density applications, and eliminate the need for through–the–board mounti

SCHOTTKY BARRIER RECTIFIERS(2.0A,70-100V)

SCHOTTKY BARRIER RECTIFIER 2.0A 70-100V