NPN SILICON PLANAR POWER TRANSISTOR

NPN SILICON PLANAR POWER TRANSISTOR TO-3 Metal Can Package

Power Transistors

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6674, 2N6675 types are NPN Silicon Triple Diffused Mesa Power Transistors designed for high voltage switching applications. MARKING: FULL PART NUMBER

POWER TRANSISTORS(5.0A,1300-1500V,55W)

5.0 AMPERE POWER TRANSISTORS 1300-1500 VOLTS 55 WATTS

NPN SILICON POWER TRANSISTOR

Horizontal Deflection Transistor . . . designed for use in televisions. • Collector–Emitter Voltages VCES 1500 Volts • Fast Switching — 400 ns Typical Fall Time • Low Thermal Resistance 1°C/W Increased Reliability • Glass Passivated (Patented Photoglass). Triple Diffused Mesa Te

SILICON DIFFUSED POWER TRANSISTOR

DESCRIPTION The UTC BU208A is a high voltage, high power, high speed switching NPN transistor in a mental envelope, primarily for use in power supply and horizontal deflection circuits of color television receivers.

5.0 AMPERES NPN SILICON POWER TRANSISTOR 700 VOLTS

Horizontal Deflection Transistor . . . designed for use in televisions. • Collector–Emitter Voltages VCES 1500 Volts • Fast Switching — 400 ns Typical Fall Time • Low Thermal Resistance 1°C/W Increased Reliability • Glass Passivated (Patented Photoglass). Triple Diffused Mesa Te

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3 package ·High voltage, high speed APPLICATIONS ·For use in horizontal deflection output stages for color TV receives.

HORIZONTAL DEFLECTION TRANSISTOR

5.0 AMPERE POWER TRANSISTORS 1300-1500 VOLTS 55 WATTS specifically designedfor use in large screen color deflection circuits. FEATURES: * Collector-EmitterSustaining Voltage - VC6X = 1300 V (Min.) - BU207 = 1500V (Win.)-BU208 * Glastivated Base-Collector Junction

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3 package ·High voltage, high speed APPLICATIONS ·For use in horizontal deflection output stages for color TV receivers.

NPN SILICON POWER TRANSISTORS

NPN Silicon Power Transistors

NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR(COLOR TV HORIZONTAL OUTPUT APPLICATIONS)

NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR • High Collector-Base Voltage(VCBO=1500V) • High Speed Switching

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

DESCRIPTION The BU208A, BU508A and BU508AFI are manufactured using Multiepitaxial Mesa technology for cost-effective high performance and use a Hollow Emitter structure to enhance switching speeds. ■ STMicroelectronics PREFERRED SALESTYPES ■ HIGH VOLTAGE CAPABILITY (> 1500 V) ■ FULLY INSULATE

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

APPLICATIONS: n HORIZONTAL DEFLECTION FOR COLOUR TV DESCRIPTION The BU208A, BU508A and BU508AFI are manufactured using Multiepitaxial Mesa technology for cost-effective high performance and use a Hollow Emitter structure to enhance switching speeds.

封装/外壳：TO-204AA，TO-3 包装：散装 描述：TRANS NPN 700V 8A TO3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Through-Hole Transistor-Bipolar Power (>1A) NPN High Voltage

功率开关晶体管

三极管

SEMICONDUCTORS

文件：2.43533 Mbytes Page：31 Pages

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

文件：240.24 Kbytes Page：8 Pages

Silicon NPN Power Transistors

文件：112.57 Kbytes Page：3 Pages

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

文件：240.24 Kbytes Page：8 Pages

SILICON DIFFUSED POWER TRANSISTOR

文件：57.8 Kbytes Page：2 Pages

POWER TRANSISTORS(5.0A,1300-1500V,55W)

5.0 AMPERE POWER TRANSISTORS 1300-1500 VOLTS 55 WATTS

SMALL OUTLINE OPTOISOLATORS TRANSISTOR OUTPUT

These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high density applications, and eliminate the need for through–the–board mounti

SCHOTTKY BARRIER RECTIFIERS(2.0A,70-100V)

SCHOTTKY BARRIER RECTIFIER 2.0A 70-100V