POWER TRANSISTORS(5.0A,1300-1500V,55W)

5.0 AMPERE POWER TRANSISTORS 1300-1500 VOLTS 55 WATTS

NPN SILICON POWER TRANSISTORS

NPN Silicon Power Transistors

Power Transistors

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6674, 2N6675 types are NPN Silicon Triple Diffused Mesa Power Transistors designed for high voltage switching applications. MARKING: FULL PART NUMBER

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • High voltage ,high speed APPLICATIONS • For use in horizontal deflection output stages for color TV receives.

HORIZONTAL DEFLECTION TRANSISTOR

5.0 AMPERE POWER TRANSISTORS 1300-1500 VOLTS 55 WATTS ...specifically designedfor use in large screen color deflection circuits. FEATURES: * Collector-EmitterSustaining Voltage - VC6X = 1300 V (Min.) - BU207 = 1500V (Win.)-BU208 * Glastivated Base-Collector Junction

SEMICONDUCTORS

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NPN POWER TRANSISTORS

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Through-Hole Transistor-Bipolar Power (>1A) NPN High Voltage

Trans GP BJT NPN 700V 8A 3-Pin(2+Tab) TO-3 Sleeve

55W NPN High Power BJT Transistor

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

APPLICATIONS: n HORIZONTAL DEFLECTION FOR COLOUR TV DESCRIPTION The BU208A, BU508A and BU508AFI are manufactured using Multiepitaxial Mesa technology for cost-effective high performance and use a Hollow Emitter structure to enhance switching speeds.

HORIZONTAL DEFLECTION TRANSISTOR

5.0 AMPERE POWER TRANSISTORS 1300-1500 VOLTS 55 WATTS ...specifically designedfor use in large screen color deflection circuits. FEATURES: * Collector-EmitterSustaining Voltage - VC6X = 1300 V (Min.) - BU207 = 1500V (Win.)-BU208 * Glastivated Base-Collector Junction

NPN SILICON PLANAR POWER TRANSISTOR

NPN SILICON PLANAR POWER TRANSISTOR TO-3 Metal Can Package

SILICON DIFFUSED POWER TRANSISTOR

DESCRIPTION The UTC BU208A is a high voltage, high power, high speed switching NPN transistor in a mental envelope, primarily for use in power supply and horizontal deflection circuits of color television receivers.

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3 package ·High voltage, high speed APPLICATIONS ·For use in horizontal deflection output stages for color TV receivers.

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3 package ·High voltage, high speed APPLICATIONS ·For use in horizontal deflection output stages for color TV receives.

Power Transistors

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6674, 2N6675 types are NPN Silicon Triple Diffused Mesa Power Transistors designed for high voltage switching applications. MARKING: FULL PART NUMBER

5.0 AMPERES NPN SILICON POWER TRANSISTOR 700 VOLTS

Horizontal Deflection Transistor . . . designed for use in televisions. • Collector–Emitter Voltages VCES 1500 Volts • Fast Switching — 400 ns Typical Fall Time • Low Thermal Resistance 1°C/W Increased Reliability • Glass Passivated (Patented Photoglass). Triple Diffused Mesa Te

NPN SILICON POWER TRANSISTOR

Horizontal Deflection Transistor . . . designed for use in televisions. • Collector–Emitter Voltages VCES 1500 Volts • Fast Switching — 400 ns Typical Fall Time • Low Thermal Resistance 1°C/W Increased Reliability • Glass Passivated (Patented Photoglass). Triple Diffused Mesa Te

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

DESCRIPTION The BU208A, BU508A and BU508AFI are manufactured using Multiepitaxial Mesa technology for cost-effective high performance and use a Hollow Emitter structure to enhance switching speeds. ■ STMicroelectronics PREFERRED SALESTYPES ■ HIGH VOLTAGE CAPABILITY (> 1500 V) ■ FULLY INSULATE

NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR(COLOR TV HORIZONTAL OUTPUT APPLICATIONS)

NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR • High Collector-Base Voltage(VCBO=1500V) • High Speed Switching

POWER TRANSISTORS(5.0A,1300-1500V,55W)

5.0 AMPERE POWER TRANSISTORS 1300-1500 VOLTS 55 WATTS

NPN SILICON POWER TRANSISTORS

NPN Silicon Power Transistors

SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION)

GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a metal envelope with integrated efficiency diode,primarily for use in horizontal deflection circuites of colour television receivers

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

DESCRIPTION The BU208D, BU508D and BU508DFI are manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. ■ BU208D AND BU508DFI ARE STM PREFERRED SALESTYPES ■ HIGH VOLTAGE CAPABILITY ■ U.L. R

isc Silicon NPN Power Transistor

DESCRIPTION • High Voltage-VCES= 1500V(Min.) • Collector Current- IC = 8.0A • Built-in Damper Diode APPLICATIONS • Designed for use in large screen color deflection circuits .

Silicon NPN Power Transistors

DESCRIPTION • High Voltage-VCES= 1500V(Min.) • Collector Current- IC = 8.0A • Built-in Damper Diode APPLICATIONS • Designed for use in large screen color deflection circuits .

NPN POWER TRANSISTORS

NPN POWER TRANSISTORS HORIZONTAL DEFLECTION CIRCUITS IN COLOUR TV RECEIVER APPLICATIONS

Silicon NPN Power Transistors

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SEMICONDUCTORS

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HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

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封装/外壳：TO-204AA，TO-3 包装：散装 描述：TRANS NPN 700V 8A TO3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

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SILICON DIFFUSED POWER TRANSISTOR

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Silicon NPN Power Transistor

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Silicon NPN Power Transistors

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HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

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Multifunctional Through Hole Through Hole

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Axial Lead & Cartridge Fuses

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Direct replacement for T6.8 Slide Base

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M12-A Male 90 Degree 4 Pin Field Attachable

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Through Hole DIP Switch

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